SDT812 datasheet, PDF - EEWORLD Datasheet

SDT812: DescriptionPower Bipolar Transistor, 5A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size663KB，11 Pages; ManufacturerSolitron Devices Inc.

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SDT812 Overview

Power Bipolar Transistor, 5A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	900 V
Configuration	SINGLE
Minimum DC current gain (hFE)	2.2
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	60 W
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	1.5 MHz

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