G636A datasheet, PDF - EEWORLD Datasheet

G636A: Description50A, 100V, NPN, Si, POWER TRANSISTOR, 0.175 X 0.310 INCH, DIE-3; CategoryDiscrete semiconductor The transistor; File Size236KB，4 Pages; ManufacturerSEMELAB

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G636A Overview

50A, 100V, NPN, Si, POWER TRANSISTOR, 0.175 X 0.310 INCH, DIE-3

Parameter Name	Attribute value
Maker	SEMELAB
Parts packaging code	DIE
package instruction	UNCASED CHIP, R-XUUC-N3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	100 V
Minimum DC current gain (hFE)	40
JESD-30 code	R-XUUC-N3
Number of terminals	3
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	SWITCHING
Transistor component materials	SILICON

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