Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | WAFER |
| package instruction | UNCASED CHIP, O-XUUC-N |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | ULTRA FAST SPEED |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE |
| JESD-30 code | O-XUUC-N |
| Number of components | 1 |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | UNCASED CHIP |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
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