EEWORLDEEWORLDEEWORLD

Part Number

Search

RN1118F(TE85L,F)

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR
CategoryDiscrete semiconductor    The transistor   
File Size209KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

RN1118F(TE85L,F) Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR

RN1118F(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)50
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON
RN1114F~RN1118F
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1114F,RN1115F,RN1116F,RN1117F,RN1118F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114F to 2118F
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1114F
RN1115F
RN1116F
RN1117F
RN1118F
R
1
(kΩ)
1
2.2
4.7
10
47
R
2
(kΩ)
10
10
10
4.7
10
ESM
JEDEC
JEITA
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1114F to 1118F
RN1114F
RN1115F
Emitter-base voltage
RN1116F
RN1117F
RN1118F
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1114F to 1118F
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号