25A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Rochester Electronics |
| Reach Compliance Code | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 25 A |
| Maximum drain-source on-resistance | 0.022 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | NOT SPECIFIED |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 100 A |
| Certification status | COMMERCIAL |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| NDB603AL | NDP603AL | |
|---|---|---|
| Description | 25A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 25A, 30V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN |
| Maker | Rochester Electronics | Rochester Electronics |
| Reach Compliance Code | unknown | unknown |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ | 100 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V | 30 V |
| Maximum drain current (ID) | 25 A | 25 A |
| Maximum drain-source on-resistance | 0.022 Ω | 0.022 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-220AB |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 100 A | 100 A |
| Certification status | COMMERCIAL | COMMERCIAL |
| surface mount | YES | NO |
| Terminal surface | TIN LEAD | NOT SPECIFIED |
| Terminal form | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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