RN1107FV datasheet, PDF - EEWORLD Datasheet

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RN1107FV: DescriptionTRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size308KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1107FV Overview

TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal

RN1107FV Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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RN1107FV~RN1109FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1107FV,RN1108FV,RN1109FV

0.22 ± 0.05

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors.

0.8 ± 0.05

1.2 ± 0.05

Unit: mm

1.2 ± 0.05

Reduce a quantity of parts and manufacturing process

Complementary to RN2107FV~RN2109FV

0.4

Simplify circuit design

Equivalent Circuit and Bias Resistor Values

0.5 ± 0.05

0.13 ± 0.05

Type No.

RN1107FV

RN1108FV

RN1109FV

R1 (kΩ)

R2 (kΩ)

VESM

1.BASE

2.EMITTER

3.COLLECTOR

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN1107FV

~RN1109FV

RN1107FV

Emitter-base voltage

RN1108FV

RN1109FV

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1107FV

~RN1109FV

(Note)

stg

EBO

Symbol

CBO

CEO

Rating

100

150

−55~150

JEDEC

―

JEITA

―

TOSHIBA

―

Weight: 0.0015g(Typ.)

Unit

°C

Note : Mounted on FR4 board (25.4 mm

25.4 mm

1.6mmt)

0.5mm

0.45mm

0.4mm

2004-03-22

0.32 ± 0.05

0.80 ± 0.05

RN1107FV Related Products

	RN1107FV	RN1108FV	RN1109FV
Description	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, VESM, 3 PIN, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	70
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz

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