P300KH12FG0 datasheet, PDF - EEWORLD Datasheet

P300KH12FG0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),550A I(T),FBASE-F-BD61; CategoryAnalog mixed-signal IC Trigger device; File Size431KB，6 Pages; ManufacturerIXYS

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P300KH12FG0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),550A I(T),FBASE-F-BD61

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	35 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
Maximum leakage current	75 mA
On-state non-repetitive peak current	9500 A
Maximum on-state current	550000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	1200 V
surface mount	NO
Trigger device type	SCR

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