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GT230NS

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size462KB,10 Pages
ManufacturerSY Sinyork Co., Ltd.
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GT230NS Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

GT230NS Parametric

Parameter NameAttribute value
MakerSY Sinyork Co., Ltd.
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)2.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature85 °C
Polarity/channel typeN-CHANNEL
surface mountYES
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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