VISHAY
TSOP11..TB1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP11..TB1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
GND
V
S
OUT
94 8692
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field distur-
bance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
Parts Table
Part
TSOP1130TB1
TSOP1133TB1
TSOP1136TB1
TSOP1137TB1
TSOP1138TB1
TSOP1140TB1
TSOP1156TB1
30 kHz
33 kHz
36 kHz
36.7 kHz
38 kHz
40 kHz
56 kHz
Carrier Frequency
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible (≥ 6 cycles/
burst)
Application Circuit
Transmitter
TSOPxxxx
with
TSALxxxx
Circuit
R
1
= 100
Ω
V
S
C
1
=
4.7 µF
V
O
+V
S
Block Diagram
2
25 kΩ
Input
PIN
AGC
Band
Pass
Demo-
dulator
V
S
OUT
GND
µC
GND
3
OUT
R
1
+ C
1
recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
O =
3.3 V by the external circuit.
1
Control Circuit
GND
Document Number 82011
Rev. 11, 15-Oct-2002
www.vishay.com
1
TSOP11..TB1
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Soldering Temperature
(T
amb
≤
85 °C)
t
≤
5s
(Pin 2)
(Pin 2)
(Pin 3)
(Pin 3)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
VISHAY
Unit
V
mA
V
mA
°C
°C
°C
mW
°C
- 0.3 to +
6.0
5
- 0.3 to +
6.0
5
100
- 25 to + 85
- 25 to + 85
50
260
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Supply Voltage (Pin 2)
Transmission Distance
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz)
E
v
= 0, test signal see fig.3, IR
diode TSAL6200, I
F
= 0.4 A
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
, f
= f
o
, test signal see fig.1
Test signal see fig.1
Test signal see fig.3
Irradiance (56 kHz)
Test signal see fig.1
Test signal see fig.3
Irradiance
Directivity
Test signal see fig.1
Angle of half transmission distance
Test condition
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
V
S
d
V
OSL
E
e min
E
e min
E
e min
E
e min
E
e max
ϕ
1/2
30
±
45
0.4
0.35
0.45
0.40
4.5
35
250
0.6
0.5
0.7
0.6
Min
0.8
Typ.
1.2
1.5
5.5
Max
1.5
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
mW/m
2
mW/m
2
W/m
2
deg
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
E
e
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
t
po
– Output Pulse Width ( ms )
0.35
0.30
Output Pulse
0.25
0.20
0.15
0.10
0.05
0.00
0.1
16907
t
pi
*)
T
*) t
pi
w
6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
t
d1 )
1)
2)
t
Input Burst Duration
l
= 950 nm,
optical test signal, fig.1
14337
3/f
0
< t
d
< 9/f
0
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
t
t
po2 )
1.0
10.0
100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Document Number 82011
Rev. 11, 15-Oct-2002
www.vishay.com
2
VISHAY
TSOP11..TB1
Vishay Semiconductors
E
e
Optical Test Signal
E
e min
– Threshold Irradiance ( mW/m
2
)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Ambient,
l
= 950 nm
Correlation with ambient light sources:
10W/m
2
^1.4klx
(Std.illum.A,T=2855K)
10W/m
2
^8.2klx
(Daylight,T=5900K)
600
ms
T = 60 ms
Output Signal,
( see Fig.4 )
600
ms
t
94 8134
V
O
V
OH
V
OL
T
on
T
off
t
16911
0.10
1.00
10.00
(W/m
2
)
100.00
E – Ambient DC Irradiance
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
l
= 950 nm,
optical test signal, fig.3
Toff
Ton
E
e min
– Threshold Irradiance ( mW/m
2
)
T
on
,T
off
– Output Pulse Width ( ms )
1.0
2.0
f = f
o
f = 10 kHz
1.0
1.5
f = 1 kHz
0.5
f = 100 Hz
0.0
0.1
1.0
10.0
100.0
1000.0
10.0
100.0 1000.010000.0
mW/m
2
)
16912
16910
E
e
– Irradiance (
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
E
e min
– Threshold Irradiance ( mW/m
2
)
1.2
E
e min
/ E
e
– Rel. Responsivity
2.0
f(E) = f
0
1.6
1.2
0.8
0.4
0.0
0.0
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV/m )
1.0
0.8
0.6
0.4
0.2
0.0
0.7
f = f
0
"5%
Df
( 3dB ) = f
0
/7
0.9
1.1
1.3
16926
f/f
0
– Relative Frequency
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82011
Rev. 11, 15-Oct-2002
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TSOP11..TB1
Vishay Semiconductors
VISHAY
1.0
0.9
Max. Envelope Duty Cycle
0
10
20
30
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
95 11340p2
40
1.0
0.9
0.8
f = 38 kHz, E
e
= 2
mW/m
2
0.7
50
60
70
80
0.6
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
16914
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity
ϕ
x
E
e min
– Threshold Irradiance ( mW/m
2
)
0.6
0.5
0.4
1.0
0.3
0.2
0.1
0.0
–30 –15
0.9
0.8
0.7
Sensitivity in dark ambient
0
10
20
30
40
50
60
70
80
0
15
30
45
60
75
90
95 11339p2
0.6
16918
T
amb
– Ambient Temperature ( C )
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity
ϕ
y
S (
l
)
rel
– Relative Spectral Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
Suitable Data Format
The circuit of the TSOP11..TB1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
850
950
1050
1150
94 8408
l
– Wavelength ( nm )
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Document Number 82011
Rev. 11, 15-Oct-2002
www.vishay.com
4
VISHAY
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP11..TB1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP11..TB1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
TSOP11..TB1
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0
16920
5
10
Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82011
Rev. 11, 15-Oct-2002
www.vishay.com
5
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