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TIM1011-2

Description
TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size145KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TIM1011-2 Overview

TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power

TIM1011-2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instruction2-9D1B, 3 PIN
Contacts3
Reach Compliance Codeunknown
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)2.6 A
FET technologyJUNCTION
highest frequency bandKU BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE

TIM1011-2 Preview

MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1011-2L
TECHNICAL DATA
FEATURES
HIGH POWER
P1dB=33.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
G
1dB
I
DS1
ΔG
( Ta= 25
°
C )
UNIT
dBm
dB
A
dB
%
dBc
A
°
C
MIN.
32.5
6.5
-42
TYP. MAX.
33.5
7.5
0.85
24
-45
0.85
1.1
±0.8
1.1
60
CONDITIONS
VDS= 9V
f= 10.7 to 11.7GHz
η
add
IM3
IDS2
ΔTch
Two-Tone Test
Po=22.0 dBm
(Single Carrier Level)
(VDS x IDS + Pin – P1dB)
x Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
( Ta= 25°C )
UNIT
mS
V
A
V
°
C/W
MIN.
-2.0
-5
TYP.
600
-3.5
2.0
5.0
MAX.
-5.0
6.0
gm
V
GSoff
I
DSS
V
GSO
R
th(c-c)
CONDITIONS
V
DS
= 3V
I
DS
= 1.0A
V
DS
=
3V
I
DS
= 30mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -30μA
Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Sep. 2006
TIM1011-2L
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
( Ta= 25
°
C )
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
V
V
A
W
°
C
°
C
RATING
15
-5
2.6
25
175
-65 to +175
PACKAGE OUTLINE (2-9D1B)
Unit: mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM1011-2L
RF PERFORMANCE
Output Power (Pout) vs. Frequency
Pout(dBm)
VDS=9V
IDS≅0.85A
35
34
33
32
31
10.7
11.2
11.7
Pin=26.0dBm
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
37
freq.=11.7GHz
36
35
34
VDS=9V
IDS≅0.85A
70
Pout
60
50
40
Pout(dBm)
32
31
30
29
28
20
22
24
26
28
30
ηadd
30
20
10
0
Pin(dBm)
3
ηadd(%)
33
TIM1011-2L
Power Dissipation(PT) vs. Case Temperature(Tc)
25
PT(W)
20
15
10
0
0
40
80
120
160
200
Tc(
°
C )
IM
3
vs. OUTPUT POWER CHARACTERISTICS
-10
V
DS
= 9 V
f= 11.7GHz
Δ
f= 5MHz
-20
IM
3
(dBc)
-30
-40
-50
-60
17
19
Po(dBm), Single Carrier Level
4
21
23
25
27
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