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U631H16DC25

Description
Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Categorystorage    storage   
File Size272KB,12 Pages
ManufacturerZentrum Mikroelektronik Dresden AG (IDT)
Download Datasheet Parametric View All

U631H16DC25 Overview

Non-Volatile SRAM, 2KX8, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

U631H16DC25 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerZentrum Mikroelektronik Dresden AG (IDT)
Parts packaging codeDIP
package instructionDIP, DIP28,.3
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time25 ns
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length34.7 mm
memory density16384 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals28
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.1 mm
Maximum standby current0.001 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm

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