HM4816AP-3E datasheet, PDF - EEWORLD Datasheet

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HM4816AP-3E: DescriptionPage Mode DRAM, 16KX1, 105ns, MOS, PDIP16; Categorystorage storage; File Size374KB，6 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM4816AP-3E Overview

Page Mode DRAM, 16KX1, 105ns, MOS, PDIP16

HM4816AP-3E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
package instruction	DIP, DIP16,.3
Reach Compliance Code	unknown
Maximum access time	105 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T16
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	PAGE MODE DRAM
memory width	1
Number of terminals	16
word count	16384 words
character code	16000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
refresh cycle	128
Maximum slew rate	0.035 mA
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

HM4816AP-3E Related Products

	HM4816AP-3E	HM4816A-7	HM4816AP-4	HM4816A-3E
Description	Page Mode DRAM, 16KX1, 105ns, MOS, PDIP16	Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16	Page Mode DRAM, 16KX1, 120ns, MOS, PDIP16	Page Mode DRAM, 16KX1, 105ns, MOS, CDIP16
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
package instruction	DIP, DIP16,.3	DIP, DIP16,.3	DIP, DIP16,.3	DIP, DIP16,.3
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	105 ns	150 ns	120 ns	105 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T16	R-XDIP-T16	R-PDIP-T16	R-XDIP-T16
JESD-609 code	e0	e0	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM
memory width	1	1	1	1
Number of terminals	16	16	16	16
word count	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	CERAMIC	PLASTIC/EPOXY	CERAMIC
encapsulated code	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP16,.3	DIP16,.3	DIP16,.3	DIP16,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	128	128	128	128
Maximum slew rate	0.035 mA	0.023 mA	0.025 mA	0.035 mA
surface mount	NO	NO	NO	NO
technology	MOS	MOS	MOS	MOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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