Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Hitachi （Renesas ） |
| package instruction | DIP, DIP16,.3 |
| Reach Compliance Code | unknown |
| Maximum access time | 150 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XDIP-T16 |
| JESD-609 code | e0 |
| memory density | 16384 bit |
| Memory IC Type | PAGE MODE DRAM |
| memory width | 1 |
| Number of terminals | 16 |
| word count | 16384 words |
| character code | 16000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP16,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| refresh cycle | 128 |
| Maximum slew rate | 0.023 mA |
| surface mount | NO |
| technology | MOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| HM4816A-7 | HM4816AP-3E | HM4816AP-4 | HM4816A-3E | |
|---|---|---|---|---|
| Description | Page Mode DRAM, 16KX1, 150ns, MOS, CDIP16 | Page Mode DRAM, 16KX1, 105ns, MOS, PDIP16 | Page Mode DRAM, 16KX1, 120ns, MOS, PDIP16 | Page Mode DRAM, 16KX1, 105ns, MOS, CDIP16 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Maker | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） | Hitachi （Renesas ） |
| package instruction | DIP, DIP16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Maximum access time | 150 ns | 105 ns | 120 ns | 105 ns |
| I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 code | R-XDIP-T16 | R-PDIP-T16 | R-PDIP-T16 | R-XDIP-T16 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
| Memory IC Type | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| memory width | 1 | 1 | 1 | 1 |
| Number of terminals | 16 | 16 | 16 | 16 |
| word count | 16384 words | 16384 words | 16384 words | 16384 words |
| character code | 16000 | 16000 | 16000 | 16000 |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC |
| encapsulated code | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP16,.3 | DIP16,.3 | DIP16,.3 | DIP16,.3 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 128 | 128 | 128 | 128 |
| Maximum slew rate | 0.023 mA | 0.035 mA | 0.025 mA | 0.035 mA |
| surface mount | NO | NO | NO | NO |
| technology | MOS | MOS | MOS | MOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
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