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MB8418-20Z

Description
Standard SRAM, 2KX8, 200ns, CMOS, CDIP24
Categorystorage    storage   
File Size153KB,6 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
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MB8418-20Z Overview

Standard SRAM, 2KX8, 200ns, CMOS, CDIP24

MB8418-20Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFUJITSU
Parts packaging codeDIP
package instructionDIP, DIP24,.6
Contacts24
Reach Compliance Codeunknown
Maximum access time200 ns
I/O typeCOMMON
JESD-30 codeR-XDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2KX8
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum standby current0.00001 A
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL

MB8418-20Z Related Products

MB8418-20Z MB8418-20LP MB8418-20LZ MB8418-20P
Description Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Standard SRAM, 2KX8, 200ns, CMOS, PDIP24 Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Standard SRAM, 2KX8, 200ns, CMOS, PDIP24
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker FUJITSU FUJITSU FUJITSU FUJITSU
Parts packaging code DIP DIP DIP DIP
package instruction DIP, DIP24,.6 DIP, DIP24,.6 DIP, DIP24,.6 DIP, DIP24,.6
Contacts 24 24 24 24
Reach Compliance Code unknown unknown unknown unknown
Maximum access time 200 ns 200 ns 200 ns 200 ns
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XDIP-T24 R-PDIP-T24 R-XDIP-T24 R-PDIP-T24
JESD-609 code e0 e0 e0 e0
memory density 16384 bit 16384 bit 16384 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8 8
Number of terminals 24 24 24 24
word count 2048 words 2048 words 2048 words 2048 words
character code 2000 2000 2000 2000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 70 °C 70 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
organize 2KX8 2KX8 2KX8 2KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC PLASTIC/EPOXY CERAMIC PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP
Encapsulate equivalent code DIP24,.6 DIP24,.6 DIP24,.6 DIP24,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.00001 A 0.000001 A 0.000001 A 0.00001 A
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL OTHER OTHER INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL
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