Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2129
DESCRIPTION
・With
TO-220F package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・High
power switching applications
・Hammer
drive,pulse motor drive applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
导½
半
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
HAN
INC
SEM
GE
Open base
CONDITIONS
ON
IC
OR
DUT
VALUE
100
100
7
3
5
0.5
UNIT
V
V
V
A
A
A
Open emitter
Open collector
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
W
20
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=30mA ;I
B
=0
I
C
=1.5A ;I
B
=3mA
I
C
=3A ;I
B
=12mA
I
C
=1.5A ;I
B
=3mA
V
CB
=100V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1.5A ; V
CE
=3V
I
C
=3A ; V
CE
=3V
2000
1000
MIN
100
2SD2129
TYP.
MAX
UNIT
V
1.5
2.0
2.0
100
2.5
15000
V
V
V
μA
mA
Switching times
t
on
t
s
t
f
固电
Fall time
导½
半
Turn-on time
Storage time
HAN
INC
SEM
GE
ON
IC
OR
DUT
1.0
5.0
2.0
μs
μs
μs
I
B1
=-I
B2
=3mA
V
CC
≈30V
,R
L
=20Ω
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2129
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions
3
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