2N5643 datasheet, PDF - EEWORLD Datasheet

2N5643: DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size636KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1440793537
package instruction	POST/STUD MOUNT, O-XRPM-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
Other features	WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)	5 A
Collector-based maximum capacity	65 pF
Collector-emitter maximum voltage	35 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	5
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	O-XRPM-F4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	60 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

	2N5643	2N5641
Description	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN	RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Objectid	1440793537	1440793521
package instruction	POST/STUD MOUNT, O-XRPM-F4	POST/STUD MOUNT, O-XRPM-F4
Contacts	4	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	WITH EMITTER BALLASTING RESISTORS	WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)	5 A	1 A
Collector-based maximum capacity	65 pF	15 pF
Collector-emitter maximum voltage	35 V	35 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	5	5
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-XRPM-F4	O-XRPM-F4
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	4	4
Maximum operating temperature	200 °C	200 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	60 W	15 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	300 MHz

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