2N5639 datasheet, PDF - EEWORLD Datasheet

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2N5639: DescriptionSmall Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92; CategoryDiscrete semiconductor The transistor; File Size91KB，1 Pages; ManufacturerCentral Semiconductor

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2N5639 Overview

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92

2N5639 Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain-source on-resistance	60 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	4 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.31 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2N5639 Related Products

	2N5639	2N5640	2N5638
Description	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92
Reach Compliance Code	compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	30 V	30 V
Maximum drain-source on-resistance	60 Ω	100 Ω	30 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	4 pF	4 pF	4 pF
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.31 W	0.31 W	0.31 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	-
Is it lead-free?	-	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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