EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK2009(T5L,PP,F)

Description
Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size274KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SK2009(T5L,PP,F) Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK2009(T5L,PP,F) Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2009
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications
Analog Switch Applications
High input impedance.
Low gate threshold voltage: V
th
= 0.5 to 1.5 V
Excellent switching times: t
on
= 0.06
μs
(typ.)
t
off
= 0.12
μs
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 1.2
(typ.)
Small package
Enhancement-mode
Unit: mm
Marking
Equivalent Circuit
JEDEC
TO-236MOD
SC-59
2-3F1F
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
30
±20
200
200
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Start of commercial production
1992-04
1
2014-03-01

2SK2009(T5L,PP,F) Related Products

2SK2009(T5L,PP,F) 2SK2009(T5LHITJ,F)
Description Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 0.2 A 0.2 A
Maximum drain-source on-resistance 2 Ω 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
RF circuit layout principles (reposted)
1.Sirf reference typical four or six layer board, standard FR4 material 2.All components should be surface mounted as much as possible 3.When placing the connector, try to avoid introducing noise into...
JasonYoo RF/Wirelessly
[Jihai APM32E103VET6S MINI Development Board Review] Part 4: Key Interrupt
I am willing to use key interrupts, as I believe that every action can be avoided. However, in actual work, this is sometimes not necessarily a good thing, and in some sense is a bad thing. I looked a...
ddllxxrr Domestic Chip Exchange
Technology Popularization: Do you know why base stations are painted in colors?
I don't know if you have noticed that the base stations that we see everywhere are gradually becoming colored. Why are they colored? Some say it is for camouflage. Others say it is for aesthetics.In f...
兰博 RF/Wirelessly
Usage of ^ in Verilog
...
至芯科技FPGA大牛 FPGA/CPLD
A brief list of long and short distance wireless communication technologies
[size=4] Wireless communication is a communication method that uses the characteristics of electromagnetic wave signals propagating in free space to exchange information. Wireless communication techno...
Jacktang Wireless Connectivity
Analysis of the internal and external structure of the microcontroller (IV)
1. The third experimentLast two times we did two experiments, both of which used the P1.0 pin to turn on the light. We can imagine: since P1.0 can turn on the light, can other pins do the same? Take a...
rain MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号