Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(RRM), 1 Element, TO-39
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
package instruction | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Configuration | SINGLE |
Maximum DC gate trigger current | 10 mA |
JEDEC-95 code | TO-39 |
JESD-30 code | O-MBCY-W3 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum rms on-state current | 1.6 A |
Repeated peak reverse voltage | 400 V |
surface mount | NO |
Terminal surface | MATTE TIN |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |
Base Number Matches | 1 |
2N1599LEADFREE | 2N1595LEADFREE | 2N1595ALEADFREE | 2N1596LEADFREE | 2N1596ALEADFREE | 2N1597LEADFREE | 2N1597ALEADFREE | 2N1598ALEADFREE | 2N1598LEADFREE | 2N1599ALEADFREE | |
---|---|---|---|---|---|---|---|---|---|---|
Description | Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 50V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 50V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 100V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 100V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 200V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 300V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 300V V(RRM), 1 Element, TO-39 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(RRM), 1 Element, TO-39 |
Is it lead-free? | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free | Lead free |
package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli | compli |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum DC gate trigger current | 10 mA | 10 mA | 2 mA | 10 mA | 2 mA | 10 mA | 2 mA | 2 mA | 10 mA | 2 mA |
JEDEC-95 code | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 | TO-39 |
JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609 code | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 | e3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum rms on-state current | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A | 1.6 A |
Repeated peak reverse voltage | 400 V | 50 V | 50 V | 100 V | 100 V | 200 V | 200 V | 300 V | 300 V | 400 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Trigger device type | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Part Number | Manufacturer | Description |
---|---|---|
2N1598 | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 1000mA I(T), 300V V(DRM) |
2N1599 | SSDI | Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 400V V(DRM), 1 Element, TO-205AD, TO-205AD, 3 PIN |
2N1598LEADFREE | Central Semiconductor | Silicon Controlled Rectifier, 1.6A I(T)RMS, 300V V(RRM), 1 Element, TO-39 |
2N3027 | Digitron | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 30; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 0.0001; Capacitance: 5; Package: TO-18 |
2N2328 | SSDI | Silicon Controlled Rectifier, 2.5A I(T)RMS, 1600mA I(T), 300V V(DRM), 1 Element, TO-5, TO-5, 3 PIN |
2N6396 | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 5000mA I(T), 200V V(DRM) |
2N6402 | Toshiba(东芝) | SILICON CONTROLLED RECTIFIER,200V V(DRM),5A I(T),TO-220 |
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2N1772A | SSDI | Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 100V V(DRM), 1 Element, TO-64, TO-64, 2 PIN |
2N1776A | SSDI | Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 300V V(DRM), 1 Element, TO-64, TO-64, 2 PIN |
2N879 | Digitron | SILICON CONTROLLED RECTIFIER |
2N1880 | Digitron | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1.25; Max DC Reverse Voltage: 0.01; Capacitance: 3; Package: TO-5 |
C15F | Semitronics Corp | Silicon Controlled Rectifier, 8A I(T)RMS, 3000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, TO-64 |
MCR718 | Central Semiconductor | SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS |
2N2327 | New Jersey Semiconductor | Thyristor SCR 250V 15A 3-Pin TO-39 |
2N1802 | Vishay(威世) | Silicon Controlled Rectifier, 110 A, 800 V, SCR, TO-208AD, TO-83, 2 PIN |
CS29-08IO1C | IXYS | Silicon Controlled Rectifier, 35A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, PLASTIC, ISOPLUS220, 3 PIN |