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2SC3346O

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size169KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SC3346O Overview

Transistor

2SC3346O Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SA1329
・High
speed switching time
: t
stg
=1.0
μs(Typ.)
・Low
collector saturation voltage
: V
CE(sat)
=0.4V(Max.)@I
C
=6A
APPLICATIONS
・For
high current switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC3346
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
80
80
6
12
2
UNIT
V
V
V
A
A
W
T
C
=25℃
40
150
-55~150

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Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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