2SK2601(Q) datasheet, PDF - EEWORLD Datasheet

2SK2601(Q): DescriptionTRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,10A I(D),TO-247VAR; CategoryDiscrete semiconductor The transistor; File Size419KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SK2601(Q) Overview

TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,10A I(D),TO-247VAR

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	10 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO
Base Number Matches	1

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