H-Type Fixed-Frequency Crystal Oscillator (XO)
The H-Type Fixed-Frequency Crystal
Oscillator (XO) is a hybrid clock
oscillator designed for use in CMOS
and TTL applications. It is available in
commercial or industrial temperature
ranges and can be ordered with a tri-
state option. This option allows the
output of the oscillator to be placed in
a high-impedance state for board-
level testing. The H-Type is available
in a surface-mount configuration and
is packaged in a hermetically sealed
metal case which is grounded to
minimize RF radiation. The pin
through-hole version is compatible
with an
8-pin DIP footprint.
Typical applications for the H-Type oscillator are to provide clock signals for
digital signal processing (DSP) chips and microprocessors. Tight stabilities
compatible with SONET and STRATUM 4 telephony requirements are available.
Features
Industry Standard Pinout
Stability to 20 ppm
TTL or CMOS
Choice of Temperature Range
Tri-State Output Option
Hermetically Sealed Metal Package
Tape and Reel Configuration
Mechanical Characteristics
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Gross Leak Test
Fine Leak Test
Seal Strength
Bend Test
Marking
ESD
Description
MIL-STD-883C, Method 2002.3, Condition A.
MIL-STD-883C, Method 2007.1, Condition A.
MIL-STD-883C, Method 1010, Condition A.
All Units 100% leak tested in deionized water.
All Units test to MIL-STD-883C, Method 1014, Condition A.
2 lbs. maximum force perpendicular to top and bottom.
MIL-STD-202E, Method 211A, Condition C.
MIL-STD-202E, Method 215.
MIL-STD-883D, Method 3015; 1000v min, HBM; 500v
CDM
Electrical Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
3.3V 5.0V 3.3V 5.0V 3.3V 5.0V
Frequency Range
Temperature Range
Stability Options
1
Supply Voltage
Supply Current
1 to 20 MHz
21 to 80 MHz
Output Levels
High
Low
Output Rise/Fall Time
2
1 to 20 MHz
21 to 80 MHz
Tri-State
Out Enable
Out Disable (High Imp.)
Output Symmetry
Start-up Time
Output Load Options
Storage Temperature
-
t
SU
-
T
S
V
DD
I
DD
f
0
T
O
1 to 80
0 to 70 or -40 to 85
±25, ±50 or ±100
3.3 (±10%) or 5.0 (±10%)
-
-
3.0
4.5
-
-
-
-
10
35
15
50
Mhz
°C
ppm
V
mA
V
OH
V
OL
t
R/F
0.3
0.5
V
-
-
2.0
45
4.0
-
-
-
-
50
3
5
4
8
6
ns
0.5
55
0.8
V
%
ms
-
°C
TTL or CMOS, 15 or 50 pF
-55
-
125
1 Inclusive of calibration tolerance at 25°C, over the operating temperature range, and
aging.
2 Current consumption is typically 0.4 mA/MHz above 20 MHz frequencies.
3 Transition times are measured between 10% and 90% of V
DD
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