MSPP6KE33CE3 datasheet, PDF - EEWORLD Datasheet

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MSPP6KE33CE3: DescriptionTrans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN; CategoryDiscrete semiconductor diode; File Size538KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MSPP6KE33CE3 Overview

Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN

MSPP6KE33CE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum breakdown voltage	36.3 V
Minimum breakdown voltage	29.7 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	26.8 V
surface mount	NO
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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P6KE6.8 thru 200CA

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

SCOTTSDALE DIVISION

DESCRIPTION

This P6KE series is an economical 600 W Transient Voltage Suppressor

(TVS) for protecting voltage-sensitive components from destruction or

degradation. It is available in both unidirectional and bi-directional

configurations. The response time of their clamping action is virtually

instantaneous. As a result, they may also be used effectively for protection

from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive

switching environments and induced RF. They can also be used for

protecting other sensitive components from secondary lightning effects per

IEC61000-4-5 and class levels defined herein. Microsemi also offers

numerous other TVS products to meet higher and lower power demands

and special applications.

IMPORTANT:

For the most current data, consult

MICROSEMI’s

website:

http://www.microsemi.com

APPEARANCE

WWW .

Microsemi

T-18

FEATURES

•

Selections for 6.8 to 200 volts breakdown (V

)

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

Optional 100%

screening for avionics grade

available by adding MA prefix to part number for added

100% temperature cycle -55

C to +125

C (10X) as well

as surge (3X) and 24 hours HTRB with post test V

(in the operating direction for unidirectional or both

directions for bidirectional)

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Surface mount equivalents available as SMBJP6KE6.8

to SMBJP6KE200CA or SMBJ5.0 to SMBJ170CA

(consult factory for other surface mount options)

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

•

APPLICATIONS / BENEFITS

Economical TVS series for thru-hole mounting

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: P6KE6.8 to P6KE130A or CA

Class 2: P6KE6.8 to P6KE68A or CA

Class 3: P6KE6.8 to P6KE36A or CA

Class 4: P6KE6.8 to P6KE18A or CA

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1: P6KE6.8 to P6KE43A or CA

Class 2: P6KE6.8 to P6KE22A or CA

•

MAXIMUM RATINGS

•

Peak Pulse Power dissipation at 25

C: 600 watts at

10/1000 µs (also see Fig 1,2, and 3).

•

Impulse repetition rate (duty factor): 0.01%

•

clamping

(0 volts to

(BR)

min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

•

Operating and Storage temperature: -65

C to +150

•

Thermal Resistance: 25

C/W at 3/8 inch (10 mm) lead

length from body, or 85°C/W junction to ambient when

mounted on FR4 PC board with 4 mm copper pads (1

oz) and track width 1 mm, length 25 mm

•

Steady-State Power: 5 watts @ T

=25

C 3/8 inch (10

mm) from body, or 1.47 W when mounted on FR4 PC

board described for thermal resistance

•

Forward Voltage at 25

C: 3.5 Volts maximum @ 50

Amp peak impulse of 8.3 ms half-sine wave

(unidirectional only)

•

Solder temperatures: 260

C for 10 s (maximum)



2003

6-01-2004 REV D

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

FINISH: Tin-Lead plated over copper and readily

solderable per MIL-STD-750, method 2026

MARKING: Body marked with part number

POLARITY: Band denotes cathode. Bidirectional

not marked

WEIGHT: 0.7 grams (approximate)

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

See package dimensions on last page

P6KE6.8 thru 200A

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

MSPP6KE33CE3 Related Products

	MSPP6KE33CE3	MSPP6KE33CAE3	MSPP6KE30CAE3	MSPP6KE30CE3
Description	Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN	Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN	Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Contacts	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum breakdown voltage	36.3 V	34.7 V	31.5 V	33 V
Minimum breakdown voltage	29.7 V	31.4 V	28.5 V	27 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Maximum non-repetitive peak reverse power dissipation	600 W	600 W	600 W	600 W
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL	BIDIRECTIONAL
Maximum power dissipation	5 W	5 W	5 W	5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	26.8 V	28.2 V	25.6 V	24.3 V
surface mount	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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