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2SC6072

Description
TRANSISTOR 2 A, 180 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, SC-67, 2-10U1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size200KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC6072 Overview

TRANSISTOR 2 A, 180 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, SC-67, 2-10U1A, 3 PIN, BIP General Purpose Power

2SC6072 Parametric

Parameter NameAttribute value
Parts packaging codeSC-67
package instructionROHS COMPLIANT, 2-10U1A, SC-67, 3 PIN
Contacts3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)2 A
Collector-emitter maximum voltage180 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
2SC6072
TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
2SC6072
Power Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
・High
transition frequency: f
T
= 200 MHz (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Ta
=
25°C
Tc
=
25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
180
180
5
2.0
1.0
2.0
20
150
55~150
Unit
V
V
V
A
A
W
W
°C
°C
1: BASE
2: COLLECTOR
3: EMITTER
JEDEC
JEITA
TOSHIBA
Weight: 1.7 g (typ.)
SC-67
2-10U1A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE
f
T
C
ob
Test Conditions
V
CB
=
180 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
5 V, I
C
=
0.1 A
V
CE
=
5 V, I
C
=
1 A
I
C
=
1 A, I
B
=
0.1 A
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
0.3 A
V
CB
=
10 V, I
E
=
0, f
=
1MHz
Min
180
100
50
Typ.
200
16
Max
5.0
5.0
320
1.0
1.5
Unit
μA
μA
V
V
V
MHz
pF
1
2009-12-21

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