W29C512AP-90 datasheet, PDF - EEWORLD Datasheet

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W29C512AP-90: Description64 K x 8 CMOS FLASH MEMORY; Categorystorage storage; File Size165KB，20 Pages; ManufacturerWinbond Electronics Corporation; Websitehttp://www.winbond.com.tw

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W29C512AP-90 Overview

64 K x 8 CMOS FLASH MEMORY

W29C512AP-90 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	PLASTIC, LCC-32
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	90 ns
command user interface	NO
Data polling	YES
Durability	1000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	524288 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	512
Number of terminals	32
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.56 mm
Department size	128
Maximum standby current	0.0001 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	YES
type	NOR TYPE
width	11.43 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

W29C512AP-90 Related Products

	W29C512AP-90	W29C512AT-90	W29C512A
Description	64 K x 8 CMOS FLASH MEMORY	64 K x 8 CMOS FLASH MEMORY	64 K x 8 CMOS FLASH MEMORY
Is it Rohs certified?	incompatible	incompatible	-
Parts packaging code	QFJ	TSOP1	-
package instruction	PLASTIC, LCC-32	TSOP1-32	-
Contacts	32	32	-
Reach Compliance Code	unknow	_compli	-
ECCN code	EAR99	EAR99	-
Maximum access time	90 ns	90 ns	-
command user interface	NO	NO	-
Data polling	YES	YES	-
Durability	1000 Write/Erase Cycles	1000 Write/Erase Cycles	-
JESD-30 code	R-PQCC-J32	R-PDSO-G32	-
JESD-609 code	e0	e0	-
length	13.97 mm	18.4 mm	-
memory density	524288 bi	524288 bi	-
Memory IC Type	FLASH	FLASH	-
memory width	8	8	-
Number of functions	1	1	-
Number of departments/size	512	512	-
Number of terminals	32	32	-
word count	65536 words	65536 words	-
character code	64000	64000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	70 °C	70 °C	-
organize	64KX8	64KX8	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	QCCJ	TSOP1	-
Encapsulate equivalent code	LDCC32,.5X.6	TSSOP32,.8,20	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	-
page size	128 words	128 words	-
Parallel/Serial	PARALLEL	PARALLEL	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	240	-
power supply	5 V	5 V	-
Programming voltage	5 V	5 V	-
Certification status	Not Qualified	Not Qualified	-
Maximum seat height	3.56 mm	1.2 mm	-
Department size	128	128	-
Maximum standby current	0.0001 A	0.0001 A	-
Maximum slew rate	0.05 mA	0.05 mA	-
Maximum supply voltage (Vsup)	5.5 V	5.5 V	-
Minimum supply voltage (Vsup)	4.5 V	4.5 V	-
Nominal supply voltage (Vsup)	5 V	5 V	-
surface mount	YES	YES	-
technology	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	-
Terminal surface	TIN LEAD	Tin/Lead (Sn/Pb)	-
Terminal form	J BEND	GULL WING	-
Terminal pitch	1.27 mm	0.5 mm	-
Terminal location	QUAD	DUAL	-
Maximum time at peak reflow temperature	NOT SPECIFIED	30	-
switch bit	YES	YES	-
type	NOR TYPE	NOR TYPE	-
width	11.43 mm	8 mm	-
Maximum write cycle time (tWC)	10 ms	10 ms	-
Base Number Matches	1	1	-

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