XC612
Series
2-Channel Voltage Detectors
ETR0204_001
■GENERAL
DESCRIPTION
The XC612 series consist of 2 voltage detectors, in 1 mini-molded, SOT-25 package.
The series provides accuracy and low power consumption through CMOS processing and laser trimming and consists of a
highly accurate voltage reference source, 2 comparators, hysteresis and output driver circuits.
The input (V
IN1
) for voltage detector 1 (V
D1
) dually functions as the power supply pin for both detector 1 (V
D1
) and detector 2
(V
D2
).
■APPLICATIONS
●Microprocessor
reset circuitry
●Memory
battery back-up circuits
●Power-on
reset circuits
●Power
failure detection
●System
battery life and charge voltage monitors
●Delay
circuitry
■FEATURES
: Setting voltage accuracy ±2%
: 2.0μA(TYP.)
(V
IN1
=V
IN2
=2.0V, Static state)
Detect Voltage
: 1.5V ~ 5.0V programmable in
100mV steps. Detector’s voltages can
be set-up independently
Conditionaly;
XC612N : V
DET1
>V
DET2
XC612D, XC612E : V
DET1
>V
DET2
,
V
DET1
<V
DET2
Operating Voltage Range
: 1.5V ~ 10.0V
Temperature Characteristics
:
±100ppm/℃
(TYP.)
Output Configuration
: N-channel open drain
CMOS Low Power Consumption
2 Voltage Detectors Built-in
: SOT-25 (150mW) mini-mold
Small Package
* CMOS Output is under development
Highly Accurate
Low Power Consumption
■TYPICAL
APPLICATION CRICUIT
■TYPICAL
PERFORMANCE
CHARACTERISTICS
1/14
XC612
Series
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
1
2
3
4
5
PIN NAME
V
DET1
V
IN1
V
SS
V
IN2
V
DET2
FUNCTION
Voltage Detector 1 Output
Detector 1 Input, Power Supply
Ground
Voltage Detector 2 Input
Voltage Detector 2 Output
■PRODUCT
CLASSIFICATION
●Selection
Guide
TYPE
XC612N
XC612D
XC612E
V
DET1
N-ch Open Drain
N-ch Open Drain
CMOS
V
DET2
N-ch Open Drain
CMOS
N-ch Open Drain
●Ordering
Information
XC612①②③④⑤⑥⑦
DESIGNATOR
①
DESCRIPTION
Output Configuration
Detect Voltage 1 (V
DET1
)
Detect Voltage 2 (V
DET2
)
Package
Device Orientation
SYMBOL
N
D
E
②③
④⑤
⑥
⑦
15½50
15½50
M
R
L
DESCRIPTION
: V
DET1
/V
DET2
: N-ch open drain
: V
DET1
: N-ch open drain, V
DET2
: CMOS
: V
DET1
: CMOS, V
DET2
: N-ch open drain
: V
DET1
: 2.5V→②25
: V
DET2
: 3.3V→③33
: SOT-25 (SOT-23-5)
: Embossed tape, standard feed
: Embossed tape, reverse feed
2/14
XC612
Series
■BLOCK
DIAGRAMS
XC612N Series
XC612D Series
XC612E Series
XC612E Series
3/14
XC612
Series
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
V
D 1
V
D 2
V
D 1
(N-ch open drain)
V
D 1
(CMOS)
Output Voltage
V
D 2
(N-ch open drain)
V
D 2
(CMOS)
V
D 1
Output Current
V
D 2
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Input Voltage
SYMBOL
V
IN1
V
IN2
V
VDET1
V
VDET2
I
VDET1
I
VDET2
Pd
Topr
Tstg
RATINGS
12.0
12.0
V
SS
– 0.3 ~ 12.0
V
SS
– 0.3 ~ V
IN1
+ 0.3
V
SS
– 0.3 ~ 12.0
V
SS
– 0.3 ~ V
IN1
+ 0.3
50
50
150
- 30 ~ + 80
- 40 ~ + 125
Ta = 25℃
UNITS
V
V
V
V
V
V
mA
mA
mW
℃
℃
4/14
XC612
Series
■ELECTRICAL
CHARACTERISTICS
Ta=25℃
PARAMETER
Detect Voltage
(V
DET1
) (*1)
Detect Voltage
(V
DET2
) (*1)
Hysteresis Range 1
Hysteresis Range 2
SYMBOL
V
DF1
V
DF2
V
HYS1
V
HYS2
MIN.
V
DF1
x 0.98
V
DF2
Voltage when V
DET2
changes from
H to L following a reduction of V
IN2
x 0.98
Voltage (V
DR1
) - V
DF1
when V
DET1
changes V
DF1(T)
from L to H following an increase of V
IN1
x 0.02
Voltage (V
DR2
) - V
DF2
when V
DET2
changes V
DF2(T)
from L to H following an increase of V
IN2
x 0.02
V
IN1
= 1.5V
-
-
-
-
-
-
-
-
-
-
1.0
0.3
3.0
5.0
6.0
7.0
-
-
-
V
IN1
= 2.0V
CONDITIONS
Voltage when V
DET1
changes from
H to L following a reduction of V
IN1
TYP.
V
DF1
V
DF2
V
DF1(T)
x 0.05
V
DF2(T)
x 0.05
1.35
1.50
1.95
2.40
3.00
0.45
0.50
0.65
0.80
1.00
-
2.2
7.7
10.1
11.5
13.0
-10.0
±100
MAX. UNITS
CIRCUITS
V
DF1
V
1
x 1.02
V
DF2
V
1
x 1.02
V
DF1(T)
V
1
x 0.08
V
DF2(T)
V
1
x 0.08
3.90
4.50
5.10
5.70
6.30
1.30
1.50
1.70
1.90
2.10
10
-
-
-
-
-
-2.0
－
μA
2
Supply Current
(V
IN1
Input Current)
I
SS
V
IN1
= 3.0V
V
IN1
= 4.0V
V
IN1
= 5.0V
V
IN2
= 1.5V
V
IN2
= 2.0V
V
IN2
= 3.0V
V
IN2
= 4.0V
V
IN2
= 5.0V
V
DF(T)
= 1.5V to 6.0V
V
IN1
= 1.0V
V
IN1
= 2.0V
N-ch, V
DS
=0.5V
V
IN1
= 3.0V
V
IN1
= 4.0V
V
IN1
= 5.0V
V
IN1
= 8.0V
P-ch (CMOS) V
DS
=-2.1V
-30℃
≦
Topr
≦
80℃
(V
DR
→V
OUT
inversion)
V
IN2
Input Current
I
IN2
μA
2
Operating Voltage
V
IN1
V
－
Output Current (*3)
I
VDET
mA
3
Temperature
ΔV
DF
Characteristics (*3)
ΔTopr½V
DF
Delay Time (*3)
(Release Voltage→
tDLY
Output inversion)
ppm/℃
ms
－
-
0.2
5
NOTE:
*1 : V
DF1
(T), V
DF2
(T) : User specified detect voltage.
*2 : Release voltage (V
DR
) = V
DF
+V
HYS
*3 : Those parameters marked with an asterisk apply to both V
DET1
and V
DET2
.
*4 : Input Voltage : please ensure that V
IN1
> V
IN2
(Input voltage of XC612D and XC612E series : please ensure that V
IN1
> V
IN2
, V
IN1
< V
IN2
.)
*5 : V
IN1
pin serve both I
SS
and power supply pin so that V
IN2
operates V
IN1
as a power supply source. For normal operation of V
IN2
,
operating voltage higher than the minimum is needed to be applied to power supply pin V
IN1
.
*6 : For CMOS output products, high level output voltage which is generated when the transient response is released becomes input
voltage of V
IN
.
5/14
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