INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB950A
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 2000(Min.)@I
C
= -3A
·High
Speed Switching
·Complement
to Type 2SD1276A
APPLICATIONS
·Designed
for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-80
V
V
CEO
Collector-Emitter Voltage
-80
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-4
A
I
CM
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
-8
A
2
W
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
40
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= -30mA ; I
B
= 0
I
C
= -3A; I
B
= -12mA
B
2SB950A
MIN
-80
TYP.
MAX
UNIT
V
-2.0
-4.0
-2.5
-0.2
-0.5
-2.0
1000
2000
20
10000
V
V
V
mA
mA
mA
I
C
= -5A; I
B
= -20mA
B
I
C
= -3A ; V
CE
= -3V
V
CB
= -100V ; I
E
= 0
V
CE
= -40V ; I
B
= 0
B
V
EB
= -5V ; I
C
= 0
I
C
= -0.5A ;V
CE
= -3V
I
C
= -3A ; V
CE
= -3V
I
C
=-0.5A;V
CE
= -10V;f
test
=1MHz
MHz
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= -3A,I
B1
= -I
B2
= -12mA,
V
CC
= -50V
0.3
2.0
0.5
μs
μs
μs
h
FE-2
Classifications
Q
2000-5000
P
4000-10000
isc Website：www.iscsemi.cn
2
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