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2SA1748GQ

Description
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size233KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA1748GQ Overview

Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SA1748GQ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
Features
Unit: mm
(0.425)
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
M
Di ain
sc te
on na
tin nc
ue e/
d
1.25
±0.10
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Di
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
te
Collector-emitter saturation voltage
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
Publication date: March 2003
tin
ue
Pl
pla d in
ea
ne clu
se
pla m d de
ht visi
ne ai ma s fo
tp t f
:// ol d d d nte inte llow
ww lo is is na n
i
w. win con con nce anc ng f
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m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
1
2
High transition frequency f
T
Small collector output capacitance C
ob
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.1
±0.1
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10˚
−50
−50
−5
−50
150
150
0.9
±0.1
0.9
+0.2
–0.1
Rating
Unit
V
V
V
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
mA
°C
mW
°C
Marking Symbol: AL
T
stg
−55
to
+150
Conditions
Min
−50
−5
−50
Typ
0 to 0.1
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
sc
on
V
V
V
CB
= −10
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
0.1
−100
500
µA
V
na
nc
e/
µA
V
CE
=
−10
V, I
C
=
−2
mA
I
C
= −10
mA, I
B
= −1
mA
200
V
CE(sat)
C
ob
0.1
250
1.5
0.3
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
M
0.2
±0.1
SJC00028BED
1

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Description Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN TRANS PNP 50V 0.05A SMINI-3

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