Ordering number : EN2210C
2SB1224 / 2SD1826
SANYO Semiconductors
DATA SHEET
2SB1224 / 2SD1826
Applications
•
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
Driver Applications
Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators.
Features
•
•
•
High DC current gain.
Large current capacity and wide ASO.
Micaless package facilitating mounting.
Specifications
( ) : 2SB1224
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
(--)70
(--)60
(-
-)6
(-
-)7
(--)10
2.0
25
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=(--)40V, IE=0A
VEB=(--)5V, IC=0A
VCE=(--)2V, IC=(--)3.5A
2000
5000
Ratings
min
typ
max
(--)0.1
(--)3.0
Unit
mA
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52307IA TI IM TC-00000687 / N2503TN (KT)/92098HA(KT)/80796TS(KOTO) 8-9896/3127AT, TS No.2210-1/5
2SB1224 / 2SD1826
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
ton
tstg
tf
Conditions
VCE=(--)5V, IC=(-
-)3.5A
IC=(--)3.5A, IB=(--)7mA
IC=(--)3.5A, IB=(--)7mA
IC=(--)5mA, IE=0A
IC=(--)50mA, RBE=∞
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
(--)70
(--)60
(0.5)0.6
(1.5)3.0
(1.4)1.7
Ratings
min
typ
20
(-
-1.0)0.9
(--)1.5
(--)2.0
max
Unit
MHz
V
V
V
V
µs
µs
µs
Package Dimensions
unit : mm (typ)
7508-002
10.0
3.2
3.5
7.2
Electrical Connection
C
4.5
2.8
B
6kΩ 200Ω
18.1
16.0
2SB1224
C
E
1.6
1.2
0.75
14.0
5.6
B
0.7
6kΩ 200Ω
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2SD1826
E
2.55
2.55
Switching Time Test Circuit
PW=50µs, Duty Cycle≤1
%
500IB1= --500IB2=IC=3A
TUT
INPUT
RB
RL
6.7Ω
50Ω
VR
+
100µF
VBE= --5V
+
470µF
VCC=20V
OUTPUT
(For PNP, the polarity is reversed.)
No.2210-2/5
2SB1224 / 2SD1826
--10
IC -- VCE
From top
--5.0mA
--4.5mA
--4.0mA
--3.5mA
--3.0mA
--2.5mA
--2.0mA
--1.5mA
2SB1224
10
IC -- VCE
2SD1826
From top
9mA
8mA
7mA
6mA
5mA
4mA
Collector Current, IC -- A
Collector Current, IC -- A
--8
8
3mA
2mA
--6
6
--1.0mA
--0.5mA
1mA
4
--4
--2
2
0
0
--1
--2
--3
IB=0mA
--4
--5
ITR09282
0
0
1
2
3
IB=0mA
4
5
ITR09283
Collector-to-Emitter Voltage, VCE -- V
--5
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
8
IC -- VCE
Collector Current, IC -- A
Collector Current, IC -- A
--4
--3
From top
--500µA
--450µA
--400µA
--350µA
--300µA
--250µA
2SB1224
6
From top
1000µA
900µA
800µA
700µA
600µA
500
µ
A
2SD1826
4
--2
--200
µA
--1
--150
µA
IB=0
µA
0
--1
--2
--3
--4
--5
ITR09284
2
400
µ
A
300
µ
A
200
µ
A
IB=0
µ
A
4
5
ITR09285
0
0
0
1
2
3
Collector-to-Emitter Voltage, VCE -- V
--5
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
8
IC -- VBE
2SB1224
VCE= --2V
2SD1826
VCE=2V
Collector Current, IC -- A
Collector Current, IC -- A
--4
6
Ta=12
0
25
°
C
--3
°
C
25
°
C
--2
--40
°
C
4
Ta=
1
2
--1
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
--2.8
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
Base-to-Emitter Voltage, VBE -- V
2
10000
7
5
3
2
1000
7
5
3
2
100
7 --0.1
2
3
5
7 --1.0
2
3
5
ITR09286
2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
--40
°
C
20
°
C
ITR09287
hFE -- IC
120
Ta=
°
C
2SB1224
VCE= --2V
10000
7
5
3
2
1000
7
5
3
2
100
DC Current Gain, hFE
DC Current Gain, hFE
C
25
°
°
C
--40
°
C
120
Ta=
2SD1826
VCE=2V
25
°
C
°
C
--40
Collector Current, IC -- A
--10
ITR09288
7
7
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
7 10
ITR09289
No.2210-3/5
2SB1224 / 2SD1826
--10
7
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
VCE(sat) -- IC
2SD1826
IC / IB=500
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SB1224
IC / IB=500
7
5
5
3
2
3
2
--1.0
7
5
3
7 --0.1
2
Ta= --40°C
1.0
25
°
C
120
°
C
25
°
C
7
5
3
Ta= --40
°
C
120
°
C
3
5
7 --1.0
2
3
5
Collector Current, IC -- A
--10
7
5
--10
ITR09290
10
7
7
0.1
2
3
5
7
1.0
2
3
5
VBE(sat) -- IC
Collector Current, IC -- A
7 10
ITR09291
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2SB1224
IC / IB=500
7
5
2SD1826
IC / IB=500
3
2
3
Ta= --40
°
C
2
Ta= --40
°
C
25
°
C
25
°
C
1.0
7
5
3
120
°
C
--1.0
7
5
120
°
C
7 --0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC -- A
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--10
ITR09292
2
7
7
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
7 10
ITR09293
ASO
ICP=--10A
IC=--7A
2SB1224
Tc=25
°
C
DC
ASO
ICP=10A
IC=7A
DC
Collector Current, IC -- A
Collector Current, IC -- A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
2SD1826
Tc=25
°
C
ope
r
ope
rati
1m
atio
n
s
1m
s
10
10
m
s
10
0m
s
10
on
m
s
0m
s
1ms to 100ms : Single pulse
2
3
5
7
--10
2
3
5
7
--100
1ms to 100ms : Single pulse
2
3
5
7
10
2
3
5
67
100
Collector-to-Emitter Voltage, VCE -- V
ITR09294
2.4
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
ITR09295
28
PC -- Tc
2SB1224 / 2SD1826
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
2.0
25
24
2SB1224 / 2SD1826
20
1.6
No
1.2
he
at
16
sin
k
12
0.8
8
0.4
4
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
0
Ambient Temperature, Ta --
°C
ITR09296
Case Temperature, Tc --
°C
ITR09297
No.2210-4/5
2SB1224 / 2SD1826
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No.2210-5/5
Analog electronics
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