Ordering number : ENA1061
2SC5501A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5501A
Features
•
•
•
•
VHF to UHF Wide-Band Low-Noise
Amplifier Applications
Low-noise
: NF=1.0dB typ (f=1GHz).
High gain
:
⏐S21e⏐
2
=13dB typ (f=1GHz).
High cut-off frequency : fT=7GHz typ.
Large allowable collector dissipation : PC=500mW max.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
✕0.8mm)
2
Conditions
Ratings
20
10
2
70
500
150
--55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
VCB=10V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=20mA
90*
Conditions
Ratings
min
typ
max
1.0
10
270*
Unit
μA
μA
* : The 2SC5501A is classified by 20mA hFE as follows :
Marking
LN4
LN5
Rank
4
5
hFE
90 to 180
135 to 270
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60408AB TI IM TC-00001434 No. A1061-1/5
2SC5501A
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
Symbol
fT
Cob
Cre
⏐
S21e
⏐
1
2
⏐
S21e
⏐
2
NF
2
Conditions
VCE=5V, IC=20mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
Ratings
min
5
typ
7
0.75
0.4
10
13
9
1.0
1.8
1.2
max
Unit
GHz
pF
pF
dB
dB
dB
Package Dimensions
unit : mm (typ)
7025-001
0.425
1.3
4
3
2.1
1.25
0.05
0.425
1
1.15
2.0
2
0.6
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
0.9
0.2
SANYO : MCP4
3
2
hFE -- IC
VCE=5V
Gain-Bandwidth Product, fT -- GHz
0.2
0.3
0.15
2
fT -- IC
VCE=5V
10
7
5
3
2
DC Current Gain, hFE
100
7
5
3
2
10
7
5
3
5
7 1.0
2
3
5
7 10
2
3
5 7 100
2
IT00637
1.0
7
5
7
1.0
2
3
5
7
10
2
3
5
7 100
2
Collector Current, IC -- mA
3
2
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
Collector Current, IC -- mA
3
IT00638
Cre -- VCB
f=1MHz
Output Capacitance, Cre -- pF
f=1MHz
2
1.0
7
5
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
IT00639
Collector-to-Base Voltage, VCB -- V
IT00640
No. A1061-2/5
2SC5501A
14
⏐
S21e
⏐
2
-- IC
f=1GHz
12
NF -- IC
VCE=5V
f=1GHz
Forward Transfer Gain,⏐
S21e
⏐
2
-- dB
12
10
V
CE
=5
V
2V
10
Noise Figure, NF -- dB
8
8
6
6
4
4
2
0
3
5 7 1.0
2
3
5
7 10
2
3
2
0
Collector Current, IC -- mA
600
5 7 100
2
IT00641
3
5
7 1.0
2
3
5
7 10
2
3
PC -- Ta
Collector Current, IC -- mA
5 7 100
2
IT00642
When mounted on ceramic substrate
(250mm
2
✕0.8mm)
Collector Dissipation, PC -- mW
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT00643
S Parameters (Common emitter)
VCE=2V, IC=1mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.974
0.950
0.906
0.852
0.809
0.796
0.764
0.744
0.734
0.722
0.711
∠S
11
--20.4
--39.4
--72.8
--102.1
--124.4
--139.9
--155.0
--167.3
--177.3
173.3
164.9
⏐
S
21
⏐
2.443
2.257
1.847
2.016
1.713
1.299
1.287
1.213
1.089
0.929
0.791
∠S
21
162.5
147.7
124.5
103.8
88.6
74.7
63.6
54.0
45.7
36.6
28.5
⏐
S
12
⏐
0.043
0.079
0.132
0.155
0.156
0.165
0.152
0.145
0.139
0.131
0.118
∠S
12
75.9
63.0
42.9
28.8
18.6
11.5
6.8
3.8
0.6
--2.1
4.1
⏐
S
22
⏐
0.983
0.940
0.853
0.780
0.704
0.694
0.653
0.666
0.702
0.709
0.707
∠S
22
--8.7
--16.6
--28.8
--35.7
--43.6
--48.2
--54.7
--59.2
--63.9
--69.2
--74.8
VCE=2V, IC=3mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.914
0.870
0.765
0.703
0.677
0.645
0.635
0.624
0.623
0.616
0.603
∠S
11
--30.2
--54.3
--100.1
--129.1
--147.3
--163.5
--173.9
176.9
169.5
161.8
154.4
⏐
S
21
⏐
6.935
5.731
5.112
4.069
3.250
2.768
2.366
2.068
1.794
1.631
1.472
∠S
21
155.9
139.8
113.5
95.7
83.3
72.4
63.5
55.4
48.5
41.1
34.7
⏐
S
12
⏐
0.041
0.070
0.098
0.109
0.112
0.114
0.114
0.119
0.122
0.127
0.135
∠S
12
71.2
55.6
36.8
28.5
24.8
23.8
25.2
25.1
24.9
28.8
30.5
⏐
S
22
⏐
0.946
0.826
0.634
0.544
0.481
0.447
0.444
0.441
0.462
0.449
0.474
∠S
22
--16.6
--29.5
--44.7
--50.2
--55.8
--60.1
--64.2
--68.6
--72.3
--77.7
--81.4
No. A1061-3/5
2SC5501A
S Parameters (Common emitter)
VCE=2V, IC=7mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.828
0.730
0.642
0.603
0.593
0.584
0.577
0.571
0.566
0.566
0.560
∠S
11
--44.7
--84.2
--129.8
--154.1
--167.7
--177.5
174.2
166.8
159.7
154.0
148.0
⏐
S
21
⏐
13.964
11.969
7.972
5.753
4.413
3.548
2.983
2.574
2.283
2.027
1.834
∠S
21
147.3
126.2
101.7
87.4
78.1
69.6
62.4
55.4
49.5
42.8
36.8
⏐
S
12
⏐
0.036
0.055
0.071
0.078
0.087
0.097
0.106
0.118
0.130
0.141
0.156
∠S
12
62.9
47.9
37.6
37.5
38.7
39.3
40.8
41.8
42.1
41.9
41.0
⏐
S
22
⏐
0.855
0.655
0.430
0.342
0.304
0.285
0.282
0.280
0.293
0.301
0.311
∠S
22
--28.9
--45.7
--60.7
--66.5
--70.9
--74.8
--78.8
--83.5
--86.5
--90.5
--94.5
VCE=2V, IC=10mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.770
0.675
0.604
0.584
0.575
0.568
0.562
0.558
0.555
0.551
0.549
∠S
11
--56.0
--99.1
--142.2
--160.9
--173.4
177.3
169.7
163.2
157.1
150.6
145.3
⏐
S
21
⏐
18.252
14.590
8.907
6.149
4.720
3.802
3.203
2.738
2.400
2.171
1.950
∠S
21
142.4
119.8
97.2
85.3
76.6
68.5
61.8
55.2
49.5
43.4
37.7
⏐
S
12
⏐
0.033
0.048
0.060
0.071
0.082
0.094
0.106
0.120
0.134
0.148
0.164
∠S
12
60.2
46.3
42.0
42.6
45.0
46.6
46.8
46.6
46.2
45.5
44.0
⏐
S
22
⏐
0.796
0.559
0.361
0.282
0.249
0.240
0.239
0.243
0.251
0.264
0.272
∠S
22
--35.9
--54.3
--67.8
--74.3
--79.0
--82.3
--86.3
--90.2
--93.9
--96.9
--100.7
VCE=5V, IC=1mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.976
0.959
0.917
0.869
0.826
0.806
0.774
0.754
0.745
0.720
0.714
∠S
11
--19.2
--37.0
--69.6
--97.2
--120.3
--136.9
--152.3
--164.6
--174.8
174.6
166.3
⏐
S
21
⏐
2.316
2.392
2.007
1.894
1.743
1.422
1.345
1.206
1.056
1.005
0.812
∠S
21
164.1
149.7
127.7
108.5
92.9
79.5
68.1
58.0
49.4
41.1
32.7
⏐
S
12
⏐
0.032
0.061
0.103
0.122
0.128
0.131
0.127
0.123
0.111
0.101
0.093
∠S
12
77.8
65.3
46.0
32.3
22.0
15.4
9.6
5.5
6.4
5.3
11.4
⏐
S
22
⏐
0.987
0.948
0.888
0.817
0.747
0.763
0.739
0.734
0.747
0.793
0.775
∠S
22
--7.2
--14.1
--22.7
--30.4
--36.9
--40.2
--45.5
--50.3
--55.0
--59.3
--64.6
VCE=5V, IC=3mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.935
0.864
0.790
0.705
0.658
0.646
0.628
0.613
0.607
0.607
0.599
∠S
11
-25.8
--52.5
--91.4
--123.6
--145.1
--157.6
--169.6
--179.5
172.2
164.8
157.5
⏐
S
21
⏐
7.126
6.521
5.128
4.426
3.730
2.953
2.542
2.221
1.974
1.697
1.578
∠S
21
157.7
141.2
117.8
98.9
85.6
75.4
66.4
57.9
51.2
43.6
36.9
⏐
S
12
⏐
0.031
0.054
0.080
0.086
0.091
0.095
0.097
0.098
0.102
0.105
0.113
∠S
12
72.3
58.0
40.8
33.0
28.7
27.1
26.5
29.5
32.8
33.7
36.4
⏐
S
22
⏐
0.959
0.864
0.690
0.609
0.558
0.521
0.516
0.516
0.528
0.534
0.527
∠S
22
--12.4
--23.1
--35.7
--40.1
--44.2
--48.0
--51.6
--55.5
--59.4
--63.7
--68.2
No. A1061-4/5
2SC5501A
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.844
0.748
0.637
0.586
0.569
0.556
0.551
0.543
0.539
0.537
0.532
∠S
11
--39.2
--74.3
--120.9
--146.5
--161.6
--172.8
178.3
170.4
163.2
156.7
150.5
⏐
S
21
⏐
14.003
12.502
8.689
6.395
4.930
3.990
3.338
2.882
2.554
2.275
2.055
∠S
21
150.3
129.9
105.1
90.2
80.2
71.7
64.2
57.2
51.2
44.9
38.6
⏐
S
12
⏐
0.028
0.044
0.059
0.066
0.073
0.082
0.090
0.100
0.111
0.122
0.134
∠S
12
65.9
50.9
41.2
40.3
41.5
42.2
44.5
45.9
46.8
46.8
46.1
⏐
S
22
⏐
0.886
0.712
0.515
0.423
0.387
0.373
0.367
0.363
0.374
0.384
0.390
∠S
22
--22.4
--35.2
--45.0
--48.3
--50.9
--53.7
--57.2
--61.2
--64.7
--68.6
--72.6
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
100
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐
S
11
⏐
0.668
0.572
0.527
0.514
0.511
0.506
0.504
0.501
0.497
0.497
0.495
∠S
11
--72.1
--116.7
--151.7
--167.7
--177.8
174.1
167.1
161.0
155.2
149.4
144.1
⏐
S
21
⏐
29.572
20.212
11.297
7.718
5.834
4.677
3.940
3.357
2.957
2.652
2.384
∠S
21
134.7
112.4
93.7
83.3
75.9
68.7
62.5
56.2
51.1
45.3
39.7
⏐
S
12
⏐
0.022
0.031
0.042
0.054
0.066
0.080
0.093
0.107
0.122
0.136
0.151
∠S
12
56.8
49.1
52.5
55.4
57.4
58.1
57.3
56.5
55.5
54.0
51.6
⏐
S
22
⏐
0.729
0.496
0.325
0.273
0.258
0.250
0.253
0.258
0.269
0.276
0.288
∠S
22
--36.1
--48.2
--52.4
--53.6
--55.7
--58.7
--62.5
--66.5
--70.6
--74.5
--78.5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1061-5/5
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