Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon
Parameter Name | Attribute value |
Maker | Microsemi |
package instruction | O-MEDB-N2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Breakdown voltage nominal value | 13 V |
Maximum clamping voltage | 18.2 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | O-MEDB-N2 |
Maximum non-repetitive peak reverse power dissipation | 600 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | DISK BUTTON |
polarity | UNIDIRECTIONAL |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 11.1 V |
Maximum reverse current | 5 µA |
surface mount | YES |
technology | AVALANCHE |
Terminal form | NO LEAD |
Terminal location | END |