BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
Rev. 4 — 7 March 2011
Product data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1.
Typical performance
Typical RF performance at T
h
= 25
°
C.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
2
G
p
(dB)
29.5
η
D
(%)
9
IMD3
(dBc)
−48
[1]
ACPR
(dBc)
−50
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz:
Average output power = 2 W
Power gain = 30 dB (typ)
Efficiency = 9 %
IMD3 =
−48
dBc
ACPR =
−50
dBc
Integrated temperature compensated bias
Excellent thermal stability
Biasing of individual stages is externally accessible
Integrated ESD protection
Small component size, very suitable for PA size reduction
On-chip matching (input matched to 50 Ohm, output partially matched)
High power gain
Designed for broadband operation (2100 MHz to 2200 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
2. Pinning information
2.1 Pinning
BLM6G22-30
BLM6G22-30G
GND
V
DS1
n.c.
n.c.
n.c.
RF_INPUT
n.c.
n.c.
V
GS1
1
2
3
4
5
6
7
8
9
16 GND
15 n.c.
14 RF_OUTPUT/V
DS2
V
GS2
10
GND 11
13 n.c.
12 GND
001aae321
Transparent top view.
Fig 1.
Pin configuration
2.2 Pin description
Table 2.
Symbol
GND
V
DS1
n.c.
RF_INPUT
V
GS1
V
GS2
RF_OUT/V
DS2
RF_GND
Pin description
Pin
1, 11, 12, 16
2
3, 4, 5, 7, 8, 13, 15
6
9
10
14
flange
Description
ground
first stage drain-source voltage
not connected
RF input
first stage gate-source voltage
second stage gate-source voltage
RF output or second stage drain-source voltage
RF ground
3. Ordering information
Table 3.
Ordering information
Package
Name
BLM6G22-30
BLM6G22-30G
HSOP16
Description
plastic, heatsink small outline package; 16 leads
Version
SOT834-1
SOT822-1
HSOP16F plastic, heatsink small outline package; 16 leads (flat)
Type number
BLM6G22-30_BLM6G22-30G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 March 2011
2 of 14
NXP Semiconductors
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
4. Block diagram
V
DS1
RF_INPUT
V
GS1
V
GS2
2
6
9
10
TEMPERATURE
COMPENSATED BIAS
001aah621
14
RF_OUTPUT/V
DS2
Fig 2.
Block diagram of BLM6G22-30 and BLM6G22-30G
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D1
I
D2
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
first stage drain current
second stage drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
-
−65
-
Max
65
+13
3
9
+150
200
Unit
V
V
A
A
°C
°C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-c)1
R
th(j-c)2
[1]
Thermal characteristics
Parameter
first stage thermal resistance
from junction to case
Conditions
T
case
= 25
°C;
P
L
= 2 W;
2-carrier W-CDMA
[1]
Value
3.9
2.1
Unit
K/W
K/W
second stage thermal resistance T
case
= 25
°C;
P
L
= 2 W;
from junction to case
2-carrier W-CDMA
[1]
Thermal resistance is determined under specific RF operating conditions.
BLM6G22-30_BLM6G22-30G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 March 2011
3 of 14
NXP Semiconductors
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
7. Characteristics
Table 6.
Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF;
3GPP test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz;
f
4
= 2167.5 MHz; V
DS
= 28 V; I
Dq1
= 270 mA; I
Dq2
= 280 mA; T
h
= 25
°
C unless otherwise specified;
in a production test circuit as described in
Section 9 “Test information”.
Symbol
G
p
RL
in
η
D
IMD3
ACPR
Parameter
power gain
input return loss
drain efficiency
third-order intermodulation distortion
adjacent channel power ratio
Conditions
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
Min
-
7.5
-
-
Typ
−14
9
−48
−50
Max
32.5
−10
-
−44.5
−47
Unit
dB
dB
%
dBc
dBc
27.5 30
8. Application information
8.1 Ruggedness
The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq1
= 270 mA; I
Dq2
= 280 mA; P
L
= 2 W; 2-carrier W-CDMA.
8.2 Impedance information
Table 7.
f
MHz
2075
2085
2095
2105
2115
2125
2135
2145
2155
2165
2175
2185
2195
2205
[1]
[2]
Typical impedance
Z
i[1]
Ω
40.9 + j22.8
41.2 + j23.2
41.6 + j23.3
41.9 + j23.3
42.1 + j23.3
42.2 + j23.2
42.4 + j23.1
42.3 + j22.9
42.5 + j22.8
42.6 + j22.8
42.7 + j22.8
43.0 + j23.0
43.6 + j23.1
44.2 + j23.3
Z
L[2]
Ω
18.0
−
j5.5
17.8
−
j5.6
17.7
−
j5.7
17.7
−
j5.9
17.6
−
j6.0
17.4
−
j6.0
17.3
−
j6.1
17.2
−
j6.1
17.0
−
j6.2
16.8
−
j6.3
16.6
−
j6.4
16.4
−
j6.6
16.3
−
j6.9
16.1
−
j7.2
Device input impedance as measured from gate to ground.
Test circuit impedance as measured from drain to ground.
BLM6G22-30_BLM6G22-30G
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 March 2011
4 of 14
NXP Semiconductors
BLM6G22-30; BLM6G22-30G
W-CDMA 2100 MHz to 2200 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G22-30G application circuit.
35
G
p
(dB)
33
001aah622
15
η
D
(%)
13
−45
IMD3,
ACPR
(dBc)
−47
IMD3
001aah623
31
G
p
η
D
11
29
9
−49
ACPR
27
7
25
2050
2100
2150
2200
f (MHz)
5
2250
−51
2050
2100
2150
2200
f (MHz)
2250
T
case
= 25
°C;
V
DS
= 28 V; P
L(AV)
= 2 W; I
Dq1
= 270 mA;
I
Dq2
= 280 mA; carrier spacing = 10 MHz.
T
case
= 25
°C;
V
DS
= 28 V; P
L(AV)
= 2 W; I
Dq1
= 270 mA;
I
Dq2
= 280 mA; carrier spacing = 10 MHz.
Fig 3.
2-carrier W-CDMA power gain and drain
efficiency as functions of frequency;
typical values
38
001aah624
Fig 4.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of frequency; typical values
001aah625
G
p
(dB)
36
(1)
35
η
D
(%)
30
25
IMD3,
−20
ACPR
(dBc)
−25
−30
−35
−40
−45
(2)
(1)
(3)
IMD3
ACPR
G
p
34
32
30
28
26
24
10
−1
(3)
(2)
G
p
η
D
G
p
20
15
10
5
0
10
2
P
L(AV)
(W)
(1), (2), (3)
−50
(2)
(3)
(1)
1
10
−55
10
−1
1
10
P
L(AV)
(W)
10
2
V
DS
= 28 V; I
Dq1
= 270 mA; I
Dq2
= 280 mA;
carrier spacing = 10 MHz.
(1) T
case
=
−30 °C
(2) T
case
= 25
°C
(3) T
case
= 85
°C
V
DS
= 28 V; I
Dq1
= 270 mA; I
Dq2
= 280 mA;
carrier spacing = 10 MHz.
(1) T
case
=
−30 °C
(2) T
case
= 25
°C
(3) T
case
= 85
°C
Fig 5.
2-carrier W-CDMA power gain and drain
efficiency as functions of
average output power and temperature;
typical values
Fig 6.
2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as functions of average output power and
temperature; typical values
© NXP B.V. 2011. All rights reserved.
BLM6G22-30_BLM6G22-30G
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 4 — 7 March 2011
5 of 14
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