2SK360IGF datasheet, PDF - EEWORLD Datasheet

2SK360IGF: DescriptionSmall Signal Field-Effect Transistor, 0.03A I(D), 20V, 1-Element, N-Channel, Silicon; CategoryDiscrete semiconductor The transistor; File Size145KB，1 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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Small Signal Field-Effect Transistor, 0.03A I(D), 20V, 1-Element, N-Channel, Silicon

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.03 A
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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