2SK1572
Silicon N Channel MOS FET
REJ03G0954-0200
(Previous: ADE-208-1294)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1572
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
Tch
2
1
Ratings
600
±30
3
6
3
25
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
Tstg
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
600
±30
—
—
2.0
—
1.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.8
2.0
295
70
12
8
25
65
30
0.9
220
Max
—
—
±10
250
3.0
5.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
I
D
= 1 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
Ω
3
3
I
F
= 2 A, V
GS
= 0
I
F
= 2 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1572
Main Characteristics
Power vs. Temperature Derating
60
10
3
PW
a
is
n)
th
S (o
=
1
in R
D
10
m
D
on by
s
ti d
C
m
ra ite
s
O
pe im
(1
pe
O l
S
is
ra
tio
n
(T
C
Maximum Safe Operation Area
10
a
re
Channel Dissipation Pch (W)
10
0
µ
s
Drain Current I
D
(A)
µ
s
40
1
0.3
0.1
0.03
0.01
ho
tP
20
=
ul
s
25
°
C
e)
)
Ta = 25°C
0
50
100
150
1
3
10
30
100
300
1,000
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
Pulse Test
10 V
5V
4.5 V
3
4
5
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
4
V
DS
= 20 V
Pulse Test
T
C
= –25°C
25°C
3
75°C
2
1
2
4V
1
3.5 V
V
GS
= 3 V
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
15 V
2
1
0.5
0.05
V
GS
= 10 V
Drain to Source Saturation Voltage V
DS (on)
(V)
12
I
D
= 2 A
8
4
1A
0.5 A
0
4
8
12
16
20
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.1
0.2
0.5
1
2
5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1572
Static Drain to Source on State
Resistance vs. Temperature
10
V
GS
= 10 V
Pulse Test
I
D
= 2 A
1A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
5
2
1
0.5
0.2
0.1
V
DS
= 20 V
Pulse Test
8
0.5 A
6
4
Tc = –25°C
25°C
75°C
2
0
–40
0
40
80
120
160
0.05
0.1
0.2
0.5
1
2
5
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
1,000
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Capacitance C (pF)
100
Coss
10
Crss
1
di/dt = 100 A/µs, V
GS
= 0
Ta = 25°C Pulse Test
5
0.05
0.1
0.2
0.5
1
2
5
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
500
20
500
Switching Characteristics
V
DS
V
DD
= 100 V
250 V
400 V
Switching Time t (ns)
400
16
200
100
50
V
GS
= 10 V, V
DD
= 30 V
PW = 2
µs,
duty
≤
1 %
300
12
t
d (off)
t
f
200
V
GS
V
DD
= 400 V
250 V
100 V
4
8
12
I
D
= 2 A
8
4
20
10
5
0.05
t
r
t
d (on)
100
0
16
0
20
0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1572
Reverse Drain Current vs.
Source to Drain Voltage
5
Reverse Drain Current I
DR
(A)
Pulse Test
4
3
2
1
5, 10 V
0
0.4
V
GS
= 0, –5 V
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
S
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
0.5
0.3
0.1
0.2
0.1
0.05
0.02
0.01
ulse
P
hot
1S
T
C
= 25°C
1.0
θch–c
(t) =
γ
S
(t)
• θch–c
θch–c
= 5.0°C/W, T
C
= 25°C
P
DM
PW
1
D = PW
T
0.03
T
100
µ
1m
10 m
100 m
0.01
10
µ
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveforms
90%
Vout Monitor
D.U.T
R
L
Vout
Vin
10 V
50
Ω
V
DD
.
= 30 V
.
t
d (on)
10%
90%
t
d (off)
t
f
10%
Vin
10%
90%
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6
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