S1AB - S1MB
1A Surface Mount Rectifiers
Voltage Range 50 to 1000 Volts
SMB/DO-214AA
.082(2.08)
.076(1.93)
.147(3.73)
.137(3.48)
FEATURES
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-O
High temperature soldering:
260°C / 10 seconds at terminals
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
MECHANICAL DATA
Case: Molded plastic
Terminals:
Matte-Sn
plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093 gram
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Pb-free lead finish (second-level interconnect).
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
S1
S1
S1
Parameter
AB BB DB
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
L
=110°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=125°C
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance ( Note 1 )
Operating Temperature Range
Storage Temperature Range
S1
GB
S1
JB
S1
KB
S1
MB
Units
V
V
V
A
A
V
uA
uA
°C/W
pF
°C
°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
ÛJL
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
1.0
30
1.1
5
50
30
12
-55 to +150
-55 to +150
Cj
T
J
T
STG
Notes: 1. Measured at 1 MHz and
applied
V
R
=4.0 Volts
2. Measured on
p.c.b.
with 0.27 x 0.27” (7.0 x 7.0mm)
copper pad areas.
3/26/2005 Rev.1.01
www.SiliconStandard.com
1 of 2
S1AB - S1MB
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT. (A)
PEAK FORWARD SURGE CURRENT. (A)
1.2
1.0
100
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
0.8
20
10
0.6
0.4
5
8.3ms Single
Half Sine Wave
Tj=Tj max
1
2
5
10
20
50
100
0.2
.20IN (5.0mm
2
) x 0.5mil
inches(0.013mm)
Thick Copper Pad Areas
2
2
1
0
0
20
40
60
80
100
o
120
140
160
LEAD TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
20
10
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2
10
1.0
Tj=125
0
C
Tj=75
0
C
.10
Tj=25
0
C
.01
.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE.(pF)
50
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
20
10
5
2
1
0.01
0.1
1.0
REVERSE VOLTAGE. (V)
10
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/26/2005 Rev.1.01
www.SiliconStandard.com
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