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RFP12N10L

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size74KB,1 Pages
ManufacturerThomson Consumer Electronics
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RFP12N10L Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

RFP12N10L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerThomson Consumer Electronics
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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