BAS20 datasheet, PDF - EEWORLD Datasheet

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BAS20: DescriptionReverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA 150V, 200mA, trr=50ns, VF=1.25 V@200mA,PD=200mW; CategoryDiscrete semiconductor diode; File Size823KB，4 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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Reverse recovery time (trr): 50ns DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 200mA Forward voltage drop (Vf): 1.25V @ 200mA 150V, 200mA, trr=50ns, VF=1.25 V@200mA,PD=200mW

BAS20 Parametric

Parameter Name	Attribute value
Maker	JCET
Reach Compliance Code	unknown

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

BAS19/BAS20

SWITCHING DIODE

SOT-23

FEATURE



Fast Switching Speed



Surface Mount Package Ideally Suited for Automatic Insertion



For General Purpose Switching Applications



High Conductance

MARKING:

BAS19:JP

BAS20:JR

Solid dot = Green molding compound device,

if none,the normal device.

MAXIMUM RATINGS (

=25℃ unless otherwise noted)

Symbol

RRM

RWM

FSM

θJA

stg

Parameter

Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @t=

8.3

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction temperature

Storage Temperature

BAS19

120

100

200

2.5

250

500

150

-55 ~ +150

BAS20

200

150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified

)

Parameter

Reverse breakdown voltage

Reverse current

BAS19

BAS20

BAS19

BAS20

Forward voltage

Diodes capacitance

Reveres recovery time

Symbol

Test

=100μA

=100V

=150V

=100mA

=200mA

=0V, f=1MHz

=30mA,I

=0.1*I

Condition

Min

120

200

0.1

1.25

Typ

Max

Unit

μA

(BR)

www.cj-elec.com

C,Mar,2016

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