RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Glass Passivated Junction
Fast Switching Rectifier
Reverse Voltage
DO-214BA (GF1)
®
0.066 (1.68)
0.040 (1.02)
ed*
ent
at
P
50 to 1000V
Forward Current
1.0A
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.066 MIN.
(1.68 MIN.)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
Dimensions in inches and (millimeters)
Glass-plastic encapsulation technique is covered by Patent
No. 3,996,602, brazed-lead assembly by Patent No.
3,930,306 and lead forming by Patent No. 5,151,846
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.118 (3.00)
0.100 (2.54)
0.108 (2.74)
0.098 (2.49)
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Ideal for surface mount automotive applications
• High temperature metallurgically bonded construction
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of MIL-S-19500
• Built-in strain relief • Easy pick and place
• Fast switching for high efficiency
• High temperature soldering guaranteed:
450°C/5 seconds at terminals.
• Complete device submersible temperature of 265°C for
10 seconds in solder bath
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Mechanical Data
Case:
JEDEC DO-214BA, molded plastic over glass body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.0048 oz, 0.12 g
Packaging codes/options:
19/6.5K per 13” Reel (12mm Tape)
17/1.5K per 7” Reel (12mm Tape)
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 120°C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Typical thermal resistance
(1)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M
RA
50
35
50
RB
100
70
100
RD
200
140
200
RG
400
280
400
1.0
30
50
80
28
–65 to +175
RJ
600
420
600
RK
800
560
800
RM
1000
700
1000
V
V
V
A
A
µA
°C/W
°C
Unit
Max. full load reverse current, full cycle average T
A
= 55°C I
R(AV)
R
ΘJA
R
ΘJL
T
J
,T
STG
Electrical Characteristics
(T
Parameter
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time at
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25 A
Typical junction capacitance at 4.0V, 1MHz
J
= 25°C unless otherwise noted)
Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M
V
F
I
R
t
rr
C
J
150
8.5
1.30
5.0
100
250
500
T
A
= 25°C
T
A
= 125°C
Unit
V
µA
ns
pF
Maximum instantaneous forward voltage at 1.0A
Note:
(1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
Document Number 88697
08-Feb-02
www.vishay.com
1
RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
30
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
25
20
15
10
5
0
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
1
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.5
60 H
Z
Resistive or
Inductive Load
0
100
110
120
130
140
150
160
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
10
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
T
J
= 125°C
1
T
J
= 100°C
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.1
T
J
= 25°C
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
100
Fig. 6 – Typical Transient
Thermal Impedance
Transient Thermal Impedance (°CW)
Mounted on
0.2 x 0.2" (5. x 7mm)
Copper Pad Areas
10
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88697
08-Feb-02
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
