UM9401 datasheet, PDF - EEWORLD Datasheet

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UM9401: Description50 V, SILICON, PIN DIODE; CategoryDiscrete semiconductor diode; File Size368KB，8 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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UM9401 Overview

50 V, SILICON, PIN DIODE

UM9401 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Microsemi
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW DISTORTION
application	SWITCHING
Minimum breakdown voltage	50 V
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	1.5 pF
Nominal diode capacitance	1.5 pF
Diode component materials	SILICON
Maximum diode forward resistance	1 Ω
Diode resistance test current	50 mA
Diode resistance test frequency	100 MHz
Diode type	PIN DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Minority carrier nominal lifetime	2 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	1.5 W
Certification status	Not Qualified
Reverse test voltage	50 V
surface mount	NO
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

UM9401 Related Products

	UM9401	UM9415	UM9401_09	UM9402
Description	50 V, SILICON, PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
Diode type	PIN DIODE	PIN DIODE	PIN DIODE	PIN DIODE
Is it lead-free?	Contains lead	Contains lead	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	incompatible
Reach Compliance Code	unknow	compli	-	unknow
ECCN code	EAR99	EAR99	-	EAR99
Other features	LOW DISTORTION	LOW DISTORTION	-	LOW HARMONIC DISTORTION
application	SWITCHING	SWITCHING	-	SWITCHING
Minimum breakdown voltage	50 V	50 V	-	50 V
Shell connection	ISOLATED	ISOLATED	-	ISOLATED
Configuration	SINGLE	SINGLE	-	SINGLE
Maximum diode capacitance	1.5 pF	4 pF	-	1.5 pF
Nominal diode capacitance	1.5 pF	4 pF	-	1.5 pF
Diode component materials	SILICON	SILICON	-	SILICON
Maximum diode forward resistance	1 Ω	1 Ω	-	1 Ω
Diode resistance test current	50 mA	50 mA	-	50 mA
Diode resistance test frequency	100 MHz	100 MHz	-	100 MHz
JESD-30 code	O-LALF-W2	O-LALF-W2	-	O-XEMW-N2
JESD-609 code	e0	e0	-	e4
Minority carrier nominal lifetime	2 µs	5 µs	-	2 µs
Number of components	1	1	-	1
Number of terminals	2	2	-	2
Maximum operating temperature	175 °C	175 °C	-	175 °C
Minimum operating temperature	-65 °C	-65 °C	-	-65 °C
Package body material	GLASS	GLASS	-	UNSPECIFIED
Package shape	ROUND	ROUND	-	ROUND
Package form	LONG FORM	LONG FORM	-	MICROWAVE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Maximum power dissipation	1.5 W	2.5 W	-	10 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified
Reverse test voltage	50 V	50 V	-	50 V
surface mount	NO	NO	-	YES
technology	POSITIVE-INTRINSIC-NEGATIVE	POSITIVE-INTRINSIC-NEGATIVE	-	POSITIVE-INTRINSIC-NEGATIVE
Terminal surface	TIN LEAD	TIN LEAD	-	GOLD
Terminal form	WIRE	WIRE	-	NO LEAD
Terminal location	AXIAL	AXIAL	-	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

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