NAND512R3A3DN1E datasheet, PDF

NAND512R3A3DN1E: Description64MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48; Categorystorage storage; File Size150KB，5 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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NAND512R3A3DN1E Overview

64MX8 FLASH 1.8V PROM, 15000ns, PDSO48, 12 X 20 MM, TSOP-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	12 X 20 MM, TSOP-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	15000 ns
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	48
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	SLC NAND TYPE
width	12 mm

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