KTA1962O datasheet, PDF - EEWORLD Datasheet

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KTA1962O: DescriptionPower Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size824KB，3 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1962O Overview

Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN

KTA1962O Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	TO-3P
package instruction	TO-3P(N), 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	15 A
Collector-emitter maximum voltage	230 V
Configuration	SINGLE
Minimum DC current gain (hFE)	80
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	130 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

KTA1962O Preview

SEMICONDUCTOR

TECHNICAL DATA

POWER AMPLIFIER APPLICATIONS.

FEATURES

・High

Collector Voltage : V

CEO

=-230V(Min.)

・Complementary

to KTC5242.

・Recommended

for 80W High Fidelity Audio Frequency

Amplifier Output Stage.

KTA1962

TRIPLE DIFFUSED PNP TRANSISTOR

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

RATING

-230

-5

-15

-1.5

130

150

-55½150

UNIT

V

A

W

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

h

FE

(2)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

(1) Classification

V

CE(sat)

V

BE

f

T

C

ob

R:55½110 , O:80½160

V

CE

=-5V, I

C

=-7A

I

C

=-8A, I

B

=-0.8A

V

CE

=-5V, I

C

=-7A

V

CE

=-5V, I

C

=-1A

V

CB

=-10V, I

E

=0, f=1MHz

35

-

60

-1.5

-1.0

30

360

-

-3.0

-1.5

-

V

MHz

pF

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

h

FE

(1) (Note)

TEST CONDITION

V

CB

=-230V, I

E

=0

V

EB

=-5V, I

C

=0

I

C

=-50mA, I

B

=0

V

CE

=-5V, I

C

=-1A

MIN.

-

-230

55

TYP.

-

MAX.

-5.0

-

160

UNIT

μ

A

μ

A

V

2004. 8. 19

Revision No : 2

1/3

KTA1962

2004. 8. 19

Revision No : 2

2/3

KTA1962

2004. 8. 19

Revision No : 2

3/3

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KTA1962O Related Products

	KTA1962O	KTA1962R
Description	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN	Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN
Maker	KEC	KEC
Parts packaging code	TO-3P	TO-3P
package instruction	TO-3P(N), 3 PIN	TO-3P(N), 3 PIN
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	15 A	15 A
Collector-emitter maximum voltage	230 V	230 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	80	55
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	130 W	130 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz

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