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MSiCSS05120CC

Description
5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size67KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSiCSS05120CC Overview

5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE

MSiCSS05120CC Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionR-XBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
applicationPOWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON CARBIDE
Diode typeRECTIFIER DIODE
JESD-30 codeR-XBCC-N3
Maximum non-repetitive peak forward current30 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature225 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountYES
technologySCHOTTKY
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1

MSiCSS05120CC Related Products

MSiCSS05120CC MSiCSN05120CA MSiCSN05120D MSiCSS05120CA MSiCSS05120D MSICSN05120CC
Description 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
package instruction R-XBCC-N3 TO-257, 3 PIN TO-257, 3 PIN U-3, SMD.5, 3 PIN R-XBCC-N3 R-XSFM-P3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application POWER POWER POWER POWER POWER POWER
Configuration COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE SILICON CARBIDE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XBCC-N3 R-XSFM-P3 R-XSFM-P3 R-XBCC-N3 R-XBCC-N3 R-XSFM-P3
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A
Number of components 2 2 2 2 2 2
Phase 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 225 °C 225 °C 225 °C 225 °C 225 °C 225 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 5 A 5 A 5 A 5 A 5 A 5 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER FLANGE MOUNT FLANGE MOUNT CHIP CARRIER CHIP CARRIER FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V 1200 V 1200 V 1200 V 1200 V
surface mount YES NO NO YES YES NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form NO LEAD PIN/PEG PIN/PEG NO LEAD NO LEAD PIN/PEG
Terminal location BOTTOM SINGLE SINGLE BOTTOM BOTTOM SINGLE
Maker Microsemi Microsemi Microsemi Microsemi - -
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