5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
Parameter Name | Attribute value |
Maker | Microsemi |
package instruction | R-XBCC-N3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
application | POWER |
Shell connection | CATHODE |
Configuration | COMMON CATHODE, 2 ELEMENTS |
Diode component materials | SILICON CARBIDE |
Diode type | RECTIFIER DIODE |
JESD-30 code | R-XBCC-N3 |
Maximum non-repetitive peak forward current | 30 A |
Number of components | 2 |
Phase | 1 |
Number of terminals | 3 |
Maximum operating temperature | 225 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 5 A |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V |
surface mount | YES |
technology | SCHOTTKY |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Base Number Matches | 1 |
MSiCSS05120CC | MSiCSN05120CA | MSiCSN05120D | MSiCSS05120CA | MSiCSS05120D | MSICSN05120CC | |
---|---|---|---|---|---|---|
Description | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE | 5 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
package instruction | R-XBCC-N3 | TO-257, 3 PIN | TO-257, 3 PIN | U-3, SMD.5, 3 PIN | R-XBCC-N3 | R-XSFM-P3 |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | compli | compli | compli |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
application | POWER | POWER | POWER | POWER | POWER | POWER |
Configuration | COMMON CATHODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS |
Diode component materials | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 code | R-XBCC-N3 | R-XSFM-P3 | R-XSFM-P3 | R-XBCC-N3 | R-XBCC-N3 | R-XSFM-P3 |
Maximum non-repetitive peak forward current | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
Number of components | 2 | 2 | 2 | 2 | 2 | 2 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 225 °C | 225 °C | 225 °C | 225 °C | 225 °C | 225 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
Maximum output current | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | CHIP CARRIER | FLANGE MOUNT | FLANGE MOUNT | CHIP CARRIER | CHIP CARRIER | FLANGE MOUNT |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
surface mount | YES | NO | NO | YES | YES | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | NO LEAD | PIN/PEG | PIN/PEG | NO LEAD | NO LEAD | PIN/PEG |
Terminal location | BOTTOM | SINGLE | SINGLE | BOTTOM | BOTTOM | SINGLE |
Maker | Microsemi | Microsemi | Microsemi | Microsemi | - | - |
Is it Rohs certified? | - | incompatible | incompatible | incompatible | incompatible | incompatible |