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2N7225U

Description
N-CHANNEL MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size899KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N7225U Overview

N-CHANNEL MOSFET

2N7225U Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-276AB
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)27.4 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-276AB
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
2N7224U, 2N7225U, 2N7227U & 2N7228U
Qualified Levels:
JAN, JANTX, and
JANTXV
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. These devices are also available in a thru hole TO-254AA package.
Microsemi also offers numerous other transistor products to meet higher and lower power
ratings with various switching speed requirements in both through-hole and surface-mount
packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number
series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592.
(See
part nomenclature
for all available options.)
RoHS compliant by design.
U
(SMD-1 or
TO-267AB)
Package
Also available in:
TO-254AA package
(leaded)
2N7224 & 2N7228
APPLICATIONS / BENEFITS
Low-profile design.
Military and other high-reliability applications.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(1)
@ T
C
= +25 °C
Gate-Source Voltage, dc
(2)
Drain Current, dc @ T
C
= +25 ºC
2N7224U
2N7225U
2N7227U
2N7228U
(2)
Drain Current, dc @ T
C
= +100 ºC
2N7224U
2N7225U
2N7227U
2N7228U
(3)
Off-State Current (Peak Total Value)
2N7224U
2N7225U
2N7227U
2N7228U
Source Current
2N7224U
2N7225U
2N7227U
2N7228U
NOTES:
1.
2.
Symbol
T
J
& T
stg
R
ӨJC
P
T
V
GS
I
D1
Value
-55 to +150
0.83
4
150
± 20
34.0
27.4
14.0
12.0
21
17
9
8
136
110
56
48
34.0
27.4
14.0
12.0
Unit
o
°C
C/W
W
V
A
I
D2
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
I
DM
A (pk)
I
S
A
Derated linearly by 1.2 W/ºC for T
C
> +25 ºC.
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal
wires and may also be limited by pin diameter:
3.
I
DM
= 4 x I
D1
as calculated in note 2.
T4-LDS-0102-1, Rev. 1 (121485)
©2012 Microsemi Corporation
Page 1 of 9
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