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1N5306

Description
2.2 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
CategoryDiscrete semiconductor    diode   
File Size86KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N5306 Overview

2.2 mA, SILICON, CURRENT REGULATOR DIODE, DO-7

1N5306 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-7
package instructionO-XALF-W2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum knee impedance52000 Ω
Maximum limit voltage1.95 V
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal regulation current (Ireg)2.2 mA
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologyFIELD EFFECT
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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