2.2 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DO-7 |
package instruction | O-XALF-W2 |
Contacts | 2 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Other features | METALLURGICALLY BONDED |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | CURRENT REGULATOR DIODE |
JEDEC-95 code | DO-35 |
JESD-30 code | O-XALF-W2 |
JESD-609 code | e0 |
Maximum knee impedance | 52000 Ω |
Maximum limit voltage | 1.95 V |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -55 °C |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.5 W |
Certification status | Not Qualified |
Nominal regulation current (Ireg) | 2.2 mA |
Maximum repetitive peak reverse voltage | 100 V |
surface mount | NO |
technology | FIELD EFFECT |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |