SB30100LCT_T0_00001 datasheet, PDF

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SB30100LCT_T0_00001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, HALOGEN FREE, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor diode; File Size95KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB30100LCT_T0_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, HALOGEN FREE, PLASTIC PACKAGE-3

SB30100LCT_T0_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	HALOGEN FREE, PLASTIC PACKAGE-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	275 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	500 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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SB30100LCT

DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER

VOLTAGE

FEATURES

• Low forward voltage drop, low power losses

• High efficiency operation

• Lead free in comply with EU RoHS 2011/65/EU directives

100 Volts

CURRENT

30 Ampers

MECHANICAL DATA

• Case : TO-220AB, Plastic

• Terminals : Solderable per MIL-STD-750, Method 2026

• Weight: 0.0655 ounces, 1.859 grams

MAXIMUM RATINGS(T

=25

C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig.1)

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load per diode

Non-repetitive avalanche energy at T

=25

C,L=60mH per diode

Ty p i c a l T h e r m a l R e s i s t a n c e

Operating junction and storage temperature range

per di ode

per device

per di ode

SYMBOL

RRM

F(AV)

FSM

A S

J C

STG

VALUE

100

275

300

2 .5

-55 to + 150

UNIT

C / W

ELECTRICAL CHARACTERISTICS(T

=25

C unless otherwise noted)

PARAMETER

Breakdown voltage per diode

SYMBOL

=1.0mA

=5A

=7.5A

=15A

=5A

=7.5A

=15A

=70V

Reverse current per diode

(2)

TEST CONDITIONS

MIN.

103

TYP.

120

0.52

0.58

0.72

0.46

0.53

0.62

MAX.

0.80

0.68

500

UNIT

=25

Instantaneous forward voltage per diode

(1)

=125

μA

=100V

=25

=125

Note.1 Pulse test : 300μs pulse width, 1% duty cycle

2. Pulse test : Pulse widh < 40ms

December 28,2012-REV.01

PAGE . 1

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