OptiMOS2 Power-Transistor
| IPP16CN10NG_10 | IPB16CN10NG | IPD16CN10NG | IPI16CN10NG | IPP16CN10NG | |
|---|---|---|---|---|---|
| Description | OptiMOS2 Power-Transistor | OptiMOS2 Power-Transistor | OptiMOS2 Power-Transistor | OptiMOS2 Power-Transistor | OptiMOS2 Power-Transistor |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to |
| Maker | - | Infineon | Infineon | Infineon | Infineon |
| Parts packaging code | - | D2PAK | TO-252 | TO-262AA | TO-220AB |
| package instruction | - | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 | GREEN, PLASTIC, TO-220, 3 PIN |
| Contacts | - | 4 | 4 | 3 | 3 |
| Reach Compliance Code | - | unknow | compli | compli | compli |
| ECCN code | - | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | - | 107 mJ | 107 mJ | 107 mJ | 107 mJ |
| Configuration | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | - | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (Abs) (ID) | - | 53 A | 53 A | 53 A | 53 A |
| Maximum drain current (ID) | - | 53 A | 53 A | 53 A | 53 A |
| Maximum drain-source on-resistance | - | 0.0165 Ω | 0.016 Ω | 0.0162 Ω | 0.0165 Ω |
| FET technology | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | - | TO-263AB | TO-252 | TO-262AA | TO-220AB |
| JESD-30 code | - | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 | R-PSFM-T3 |
| JESD-609 code | - | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | - | 1 | 3 | - | 3 |
| Number of components | - | 1 | 1 | 1 | 1 |
| Number of terminals | - | 2 | 2 | 3 | 3 |
| Operating mode | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | - | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | - | 260 | 260 | NOT SPECIFIED | 260 |
| Polarity/channel type | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | - | 100 W | 100 W | 100 W | 100 W |
| Maximum pulsed drain current (IDM) | - | 212 A | 212 A | 212 A | 212 A |
| Certification status | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | - | YES | YES | NO | NO |
| Terminal surface | - | Matte Tin (Sn) | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | - | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | - | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | - | 40 | 40 | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | - | SILICON | SILICON | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD