NTTFS4930N datasheet, PDF - EEWORLD Datasheet

NTTFS4930N: Description7.2 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET; Categorysemiconductor Discrete semiconductor; File Size123KB，7 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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NTTFS4930N Overview

7.2 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Number of terminals	5
Minimum breakdown voltage	30 V
Processing package description	3.30 × 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, CASE 511AB-01, U8FL, WDFN-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	SQUARE
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	MATTE Tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	7.2 A
Maximum drain on-resistance	0.0300 ohm
Maximum leakage current pulse	45 A

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