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SK25GD12T4ET

Description
IGBT Module
CategoryDiscrete semiconductor    The transistor   
File Size847KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
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SK25GD12T4ET Overview

IGBT Module

SK25GD12T4ET Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionFLANGE MOUNT, R-PUFM-X15
Contacts19
Manufacturer packaging codeCASE T52
Reach Compliance Codecompli
Shell connectionISOLATED
Maximum collector current (IC)37 A
Collector-emitter maximum voltage1200 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X15
Number of components6
Number of terminals15
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)365.5 ns
Nominal on time (ton)41.5 ns
VCEsat-Max2.05 V
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