IFS150B12N3E4_B31 datasheet, PDF

IFS150B12N3E4_B31: DescriptionIGBT-modules; CategoryDiscrete semiconductor The transistor; File Size648KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IGBT-modules

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-XUFM-X34
Contacts	34
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	1200 V
Configuration	COMPLEX
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X34
Number of components	6
Number of terminals	34
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	750 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	640 ns
Nominal on time (ton)	240 ns
VCEsat-Max	2.15 V

	IFS150B12N3E4_B31	IFS150B12N3E4B31BOSA1
Description	IGBT-modules	MOD IGBT LOW PWR ECONO
Is it Rohs certified?	conform to	conform to
Maker	Infineon	Infineon
package instruction	FLANGE MOUNT, R-XUFM-X34	FLANGE MOUNT, R-XUFM-X41
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	COMPLEX	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
JESD-30 code	R-XUFM-X34	R-XUFM-X41
Number of components	6	6
Number of terminals	34	41
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
surface mount	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	640 ns	640 ns
Nominal on time (ton)	240 ns	240 ns

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