NSF40604 datasheet, PDF - EEWORLD Datasheet

NSF40604: DescriptionPower Field-Effect Transistor, 20A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-257, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size71KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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NSF40604 Overview

Power Field-Effect Transistor, 20A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-257, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1689298556
Parts packaging code	TO-258AA
package instruction	TO-257, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	AVALANCHE RATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-258AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Maximum pulsed drain current (IDM)	65 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

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